Structural and Optical Properties of Silicon Carbide Powders Synthesized from Organosilane Using High-Temperature High-Pressure Method

The development of new strategies for the mass synthesis of SiC nanocrystals with high structure perfection and narrow particle size distribution remains in demand for high-tech applications. In this work, the size-controllable synthesis of the SiC 3C polytype, free of sp<sup>2</sup> car...

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Autores principales: Evgeny A. Ekimov, Vladimir S. Krivobok, Mikhail V. Kondrin, Dmitry A. Litvinov, Ludmila N. Grigoreva, Aleksandra V. Koroleva, Darya A. Zazymkina, Roman A. Khmelnitskii, Denis F. Aminev, Sergey N. Nikolaev
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spelling oai:doaj.org-article:a20ae12c88014ea79af71220aa60bb0b2021-11-25T18:32:32ZStructural and Optical Properties of Silicon Carbide Powders Synthesized from Organosilane Using High-Temperature High-Pressure Method10.3390/nano111131112079-4991https://doaj.org/article/a20ae12c88014ea79af71220aa60bb0b2021-11-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/3111https://doaj.org/toc/2079-4991The development of new strategies for the mass synthesis of SiC nanocrystals with high structure perfection and narrow particle size distribution remains in demand for high-tech applications. In this work, the size-controllable synthesis of the SiC 3C polytype, free of sp<sup>2</sup> carbon, with high structure quality nanocrystals, was realized for the first time by the pyrolysis of organosilane C<sub>12</sub>H<sub>36</sub>Si<sub>6</sub> at 8 GPa and temperatures up to 2000 °C. It is shown that the average particle size can be monotonically changed from ~2 nm to ~500 nm by increasing the synthesis temperature from 800 °C to 1400 °C. At higher temperatures, further enlargement of the crystals is impeded, which is consistent with the recrystallization mechanism driven by a decrease in the surface energy of the particles. The optical properties investigated by IR transmission spectroscopy, Raman scattering, and low-temperature photoluminescence provided information about the concentration and distribution of carriers in nanoparticles, as well as the dominant type of internal point defects. It is shown that changing the growth modes in combination with heat treatment enables control over not only the average crystal size, but also the LO phonon—plasmon coupled modes in the crystals, which is of interest for applications related to IR photonics.Evgeny A. EkimovVladimir S. KrivobokMikhail V. KondrinDmitry A. LitvinovLudmila N. GrigorevaAleksandra V. KorolevaDarya A. ZazymkinaRoman A. KhmelnitskiiDenis F. AminevSergey N. NikolaevMDPI AGarticlecrystal morphologyetchinggrowth modelsnanostructuresX-ray diffractionsemiconducting silicon compoundsChemistryQD1-999ENNanomaterials, Vol 11, Iss 3111, p 3111 (2021)
institution DOAJ
collection DOAJ
language EN
topic crystal morphology
etching
growth models
nanostructures
X-ray diffraction
semiconducting silicon compounds
Chemistry
QD1-999
spellingShingle crystal morphology
etching
growth models
nanostructures
X-ray diffraction
semiconducting silicon compounds
Chemistry
QD1-999
Evgeny A. Ekimov
Vladimir S. Krivobok
Mikhail V. Kondrin
Dmitry A. Litvinov
Ludmila N. Grigoreva
Aleksandra V. Koroleva
Darya A. Zazymkina
Roman A. Khmelnitskii
Denis F. Aminev
Sergey N. Nikolaev
Structural and Optical Properties of Silicon Carbide Powders Synthesized from Organosilane Using High-Temperature High-Pressure Method
description The development of new strategies for the mass synthesis of SiC nanocrystals with high structure perfection and narrow particle size distribution remains in demand for high-tech applications. In this work, the size-controllable synthesis of the SiC 3C polytype, free of sp<sup>2</sup> carbon, with high structure quality nanocrystals, was realized for the first time by the pyrolysis of organosilane C<sub>12</sub>H<sub>36</sub>Si<sub>6</sub> at 8 GPa and temperatures up to 2000 °C. It is shown that the average particle size can be monotonically changed from ~2 nm to ~500 nm by increasing the synthesis temperature from 800 °C to 1400 °C. At higher temperatures, further enlargement of the crystals is impeded, which is consistent with the recrystallization mechanism driven by a decrease in the surface energy of the particles. The optical properties investigated by IR transmission spectroscopy, Raman scattering, and low-temperature photoluminescence provided information about the concentration and distribution of carriers in nanoparticles, as well as the dominant type of internal point defects. It is shown that changing the growth modes in combination with heat treatment enables control over not only the average crystal size, but also the LO phonon—plasmon coupled modes in the crystals, which is of interest for applications related to IR photonics.
format article
author Evgeny A. Ekimov
Vladimir S. Krivobok
Mikhail V. Kondrin
Dmitry A. Litvinov
Ludmila N. Grigoreva
Aleksandra V. Koroleva
Darya A. Zazymkina
Roman A. Khmelnitskii
Denis F. Aminev
Sergey N. Nikolaev
author_facet Evgeny A. Ekimov
Vladimir S. Krivobok
Mikhail V. Kondrin
Dmitry A. Litvinov
Ludmila N. Grigoreva
Aleksandra V. Koroleva
Darya A. Zazymkina
Roman A. Khmelnitskii
Denis F. Aminev
Sergey N. Nikolaev
author_sort Evgeny A. Ekimov
title Structural and Optical Properties of Silicon Carbide Powders Synthesized from Organosilane Using High-Temperature High-Pressure Method
title_short Structural and Optical Properties of Silicon Carbide Powders Synthesized from Organosilane Using High-Temperature High-Pressure Method
title_full Structural and Optical Properties of Silicon Carbide Powders Synthesized from Organosilane Using High-Temperature High-Pressure Method
title_fullStr Structural and Optical Properties of Silicon Carbide Powders Synthesized from Organosilane Using High-Temperature High-Pressure Method
title_full_unstemmed Structural and Optical Properties of Silicon Carbide Powders Synthesized from Organosilane Using High-Temperature High-Pressure Method
title_sort structural and optical properties of silicon carbide powders synthesized from organosilane using high-temperature high-pressure method
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/a20ae12c88014ea79af71220aa60bb0b
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