Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap

Abstract Polariton lasers are coherent light sources based on the condensation of exciton-polaritons in semiconductor microcavities, which occurs either in the kinetic or thermodynamic (Bose-Einstein) regime. Besides their fundamental interest, polariton lasers have the potential of extremely low op...

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Autores principales:	R. Jayaprakash, F. G. Kalaitzakis, G. Christmann, K. Tsagaraki, M. Hocevar, B. Gayral, E. Monroy, N. T. Pelekanos
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/a23516fe5cee402d81d2b1b39218aa65
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spelling	oai:doaj.org-article:a23516fe5cee402d81d2b1b39218aa652021-12-02T11:52:43ZUltra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap10.1038/s41598-017-06125-y2045-2322https://doaj.org/article/a23516fe5cee402d81d2b1b39218aa652017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-06125-yhttps://doaj.org/toc/2045-2322Abstract Polariton lasers are coherent light sources based on the condensation of exciton-polaritons in semiconductor microcavities, which occurs either in the kinetic or thermodynamic (Bose-Einstein) regime. Besides their fundamental interest, polariton lasers have the potential of extremely low operating thresholds. Here, we demonstrate ultra-low threshold polariton lasing at room temperature, using an all-dielectric, GaN membrane-based microcavity, with a spontaneously-formed zero-dimensional trap. The microcavity is fabricated using an innovative method, which involves photo-electrochemical etching of an InGaN sacrificial layer and allows for the incorporation of optimally-grown GaN active quantum wells inside a cavity with atomically-smooth surfaces. The resulting structure presents near-theoretical Q-factors and pronounced strong-coupling effects, with a record-high Rabi splitting of 64 meV at room-temperature. Polariton lasing is observed at threshold carrier densities 2.5 orders of magnitude lower than the exciton saturation density. Above threshold, angle-resolved emission spectra reveal an ordered pattern in k-space, attributed to polariton condensation at discrete levels of a single confinement site. This confinement mechanism along with the high material and optical quality of the microcavity, accounts for the enhanced performance of our polariton laser, and pave the way for further developments in the area of robust room temperature polaritonic devices.R. JayaprakashF. G. KalaitzakisG. ChristmannK. TsagarakiM. HocevarB. GayralE. MonroyN. T. PelekanosNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q R. Jayaprakash F. G. Kalaitzakis G. Christmann K. Tsagaraki M. Hocevar B. Gayral E. Monroy N. T. Pelekanos Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap
description	Abstract Polariton lasers are coherent light sources based on the condensation of exciton-polaritons in semiconductor microcavities, which occurs either in the kinetic or thermodynamic (Bose-Einstein) regime. Besides their fundamental interest, polariton lasers have the potential of extremely low operating thresholds. Here, we demonstrate ultra-low threshold polariton lasing at room temperature, using an all-dielectric, GaN membrane-based microcavity, with a spontaneously-formed zero-dimensional trap. The microcavity is fabricated using an innovative method, which involves photo-electrochemical etching of an InGaN sacrificial layer and allows for the incorporation of optimally-grown GaN active quantum wells inside a cavity with atomically-smooth surfaces. The resulting structure presents near-theoretical Q-factors and pronounced strong-coupling effects, with a record-high Rabi splitting of 64 meV at room-temperature. Polariton lasing is observed at threshold carrier densities 2.5 orders of magnitude lower than the exciton saturation density. Above threshold, angle-resolved emission spectra reveal an ordered pattern in k-space, attributed to polariton condensation at discrete levels of a single confinement site. This confinement mechanism along with the high material and optical quality of the microcavity, accounts for the enhanced performance of our polariton laser, and pave the way for further developments in the area of robust room temperature polaritonic devices.
format	article
author	R. Jayaprakash F. G. Kalaitzakis G. Christmann K. Tsagaraki M. Hocevar B. Gayral E. Monroy N. T. Pelekanos
author_facet	R. Jayaprakash F. G. Kalaitzakis G. Christmann K. Tsagaraki M. Hocevar B. Gayral E. Monroy N. T. Pelekanos
author_sort	R. Jayaprakash
title	Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap
title_short	Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap
title_full	Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap
title_fullStr	Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap
title_full_unstemmed	Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap
title_sort	ultra-low threshold polariton lasing at room temperature in a gan membrane microcavity with a zero-dimensional trap
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/a23516fe5cee402d81d2b1b39218aa65
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Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap

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