High performing flexible optoelectronic devices using thin films of topological insulator

Abstract Topological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Animesh Pandey, Reena Yadav, Mandeep Kaur, Preetam Singh, Anurag Gupta, Sudhir Husale
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/a29ba76c1f3f4d39aa9843dc2ad83491
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:a29ba76c1f3f4d39aa9843dc2ad83491
record_format	dspace
spelling	oai:doaj.org-article:a29ba76c1f3f4d39aa9843dc2ad834912021-12-02T14:01:21ZHigh performing flexible optoelectronic devices using thin films of topological insulator10.1038/s41598-020-80738-82045-2322https://doaj.org/article/a29ba76c1f3f4d39aa9843dc2ad834912021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-80738-8https://doaj.org/toc/2045-2322Abstract Topological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi2Te3) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 108 Jones for 1064 nm and 58 A/W, 6.1 × 108 Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.Animesh PandeyReena YadavMandeep KaurPreetam SinghAnurag GuptaSudhir HusaleNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Animesh Pandey Reena Yadav Mandeep Kaur Preetam Singh Anurag Gupta Sudhir Husale High performing flexible optoelectronic devices using thin films of topological insulator
description	Abstract Topological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi2Te3) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 108 Jones for 1064 nm and 58 A/W, 6.1 × 108 Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.
format	article
author	Animesh Pandey Reena Yadav Mandeep Kaur Preetam Singh Anurag Gupta Sudhir Husale
author_facet	Animesh Pandey Reena Yadav Mandeep Kaur Preetam Singh Anurag Gupta Sudhir Husale
author_sort	Animesh Pandey
title	High performing flexible optoelectronic devices using thin films of topological insulator
title_short	High performing flexible optoelectronic devices using thin films of topological insulator
title_full	High performing flexible optoelectronic devices using thin films of topological insulator
title_fullStr	High performing flexible optoelectronic devices using thin films of topological insulator
title_full_unstemmed	High performing flexible optoelectronic devices using thin films of topological insulator
title_sort	high performing flexible optoelectronic devices using thin films of topological insulator
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/a29ba76c1f3f4d39aa9843dc2ad83491
work_keys_str_mv	AT animeshpandey highperformingflexibleoptoelectronicdevicesusingthinfilmsoftopologicalinsulator AT reenayadav highperformingflexibleoptoelectronicdevicesusingthinfilmsoftopologicalinsulator AT mandeepkaur highperformingflexibleoptoelectronicdevicesusingthinfilmsoftopologicalinsulator AT preetamsingh highperformingflexibleoptoelectronicdevicesusingthinfilmsoftopologicalinsulator AT anuraggupta highperformingflexibleoptoelectronicdevicesusingthinfilmsoftopologicalinsulator AT sudhirhusale highperformingflexibleoptoelectronicdevicesusingthinfilmsoftopologicalinsulator
_version_	1718392218078674944

High performing flexible optoelectronic devices using thin films of topological insulator

Ejemplares similares