Electrochemical metallization cell with anion supplying active electrode

Abstract Electrochemical metallization (ECM) memories are among the various emerging non-volatile memory technologies, contending to replace DRAM and Flash and enabling novel neuromorphic computing applications. Typically, the operation of ECM cell is based on the electrochemical redox reactions of...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Ziyang Zhang, Yaoyuan Wang, Yan Luo, Yuhan He, Mingyuan Ma, Rongrong Yang, Huanglong Li
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
R
Q
Acceso en línea:https://doaj.org/article/a3725203f91e45a3900a98b8d5df66e1
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:a3725203f91e45a3900a98b8d5df66e1
record_format dspace
spelling oai:doaj.org-article:a3725203f91e45a3900a98b8d5df66e12021-12-02T15:09:10ZElectrochemical metallization cell with anion supplying active electrode10.1038/s41598-018-30746-62045-2322https://doaj.org/article/a3725203f91e45a3900a98b8d5df66e12018-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-30746-6https://doaj.org/toc/2045-2322Abstract Electrochemical metallization (ECM) memories are among the various emerging non-volatile memory technologies, contending to replace DRAM and Flash and enabling novel neuromorphic computing applications. Typically, the operation of ECM cell is based on the electrochemical redox reactions of the cation supplying active electrode (e.g., Ag, Cu). Although extensively investigated, the possibility of utilizing new materials for the active electrode remains largely undiscussed. In this paper, an ECM cell with a Te active electrode is fabricated. It is found that the SET operation of the device occurs under negative voltage on the active electrode, which is opposite to that of the device with Ag electrode, indicating that the Te electrode supplies Te2− anions by electrochemical reduction. The influence of the electrolyte material on the switching properties is also found to be more significant for devices with Te electrodes. For Pt/GeS/Te and Pt/Ge2Sb2Te5/Te cells, repeatable unipolar and bipolar resistive switching are observed, respectively, which can be attributed to the rupture of the filament by Joule heating for the former and by ECM for the latter in the RESET process. The semiconducting properties of Te, the reversed operating polarity and the electrolyte dependent switching characteristics open up unprecedented prospects for ECM cells.Ziyang ZhangYaoyuan WangYan LuoYuhan HeMingyuan MaRongrong YangHuanglong LiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Ziyang Zhang
Yaoyuan Wang
Yan Luo
Yuhan He
Mingyuan Ma
Rongrong Yang
Huanglong Li
Electrochemical metallization cell with anion supplying active electrode
description Abstract Electrochemical metallization (ECM) memories are among the various emerging non-volatile memory technologies, contending to replace DRAM and Flash and enabling novel neuromorphic computing applications. Typically, the operation of ECM cell is based on the electrochemical redox reactions of the cation supplying active electrode (e.g., Ag, Cu). Although extensively investigated, the possibility of utilizing new materials for the active electrode remains largely undiscussed. In this paper, an ECM cell with a Te active electrode is fabricated. It is found that the SET operation of the device occurs under negative voltage on the active electrode, which is opposite to that of the device with Ag electrode, indicating that the Te electrode supplies Te2− anions by electrochemical reduction. The influence of the electrolyte material on the switching properties is also found to be more significant for devices with Te electrodes. For Pt/GeS/Te and Pt/Ge2Sb2Te5/Te cells, repeatable unipolar and bipolar resistive switching are observed, respectively, which can be attributed to the rupture of the filament by Joule heating for the former and by ECM for the latter in the RESET process. The semiconducting properties of Te, the reversed operating polarity and the electrolyte dependent switching characteristics open up unprecedented prospects for ECM cells.
format article
author Ziyang Zhang
Yaoyuan Wang
Yan Luo
Yuhan He
Mingyuan Ma
Rongrong Yang
Huanglong Li
author_facet Ziyang Zhang
Yaoyuan Wang
Yan Luo
Yuhan He
Mingyuan Ma
Rongrong Yang
Huanglong Li
author_sort Ziyang Zhang
title Electrochemical metallization cell with anion supplying active electrode
title_short Electrochemical metallization cell with anion supplying active electrode
title_full Electrochemical metallization cell with anion supplying active electrode
title_fullStr Electrochemical metallization cell with anion supplying active electrode
title_full_unstemmed Electrochemical metallization cell with anion supplying active electrode
title_sort electrochemical metallization cell with anion supplying active electrode
publisher Nature Portfolio
publishDate 2018
url https://doaj.org/article/a3725203f91e45a3900a98b8d5df66e1
work_keys_str_mv AT ziyangzhang electrochemicalmetallizationcellwithanionsupplyingactiveelectrode
AT yaoyuanwang electrochemicalmetallizationcellwithanionsupplyingactiveelectrode
AT yanluo electrochemicalmetallizationcellwithanionsupplyingactiveelectrode
AT yuhanhe electrochemicalmetallizationcellwithanionsupplyingactiveelectrode
AT mingyuanma electrochemicalmetallizationcellwithanionsupplyingactiveelectrode
AT rongrongyang electrochemicalmetallizationcellwithanionsupplyingactiveelectrode
AT huanglongli electrochemicalmetallizationcellwithanionsupplyingactiveelectrode
_version_ 1718387893056045056