On the applicability of two‐bit carbon nanotube through‐silicon via for power distribution networks in 3‐D integrated circuits

Abstract This study investigates the possibility of the carbon nanotube (CNT)‐based through‐silicon vias (TSVs) for improving power integrity of 3‐D integrated circuits (3‐D ICs). The circuit model is developed for 2‐bit CNT TSV and validated through the full‐wave electromagnetic simulator HFSS simu...

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Autores principales:	Qing‐Hao Hu, Wen‐Sheng Zhao, Kai Fu, Da‐Wei Wang, Gaofeng Wang
Formato:	article
Lenguaje:	EN
Publicado:	Wiley 2021
Materias:	Computer engineering. Computer hardware TK7885-7895
Acceso en línea:	https://doaj.org/article/a3fad4e435e64d8298c1e9542ad73353
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spelling	oai:doaj.org-article:a3fad4e435e64d8298c1e9542ad733532021-11-06T03:20:47ZOn the applicability of two‐bit carbon nanotube through‐silicon via for power distribution networks in 3‐D integrated circuits1751-85981751-858X10.1049/cds2.12010https://doaj.org/article/a3fad4e435e64d8298c1e9542ad733532021-01-01T00:00:00Zhttps://doi.org/10.1049/cds2.12010https://doaj.org/toc/1751-858Xhttps://doaj.org/toc/1751-8598Abstract This study investigates the possibility of the carbon nanotube (CNT)‐based through‐silicon vias (TSVs) for improving power integrity of 3‐D integrated circuits (3‐D ICs). The circuit model is developed for 2‐bit CNT TSV and validated through the full‐wave electromagnetic simulator HFSS simulations. The 2‐bit CNT TSV is applied to power distribution networks (PDNs) by combining the validated equivalent‐circuit model and that TSV‐based PDN impedance is compared with the traditional one. By virtue of the large capacitance and low inductance of the 2‐bit CNT TSV, the PDN impedance of the 3‐D IC can be suppressed significantly and the anti‐resonant frequency can be increased.Qing‐Hao HuWen‐Sheng ZhaoKai FuDa‐Wei WangGaofeng WangWileyarticleComputer engineering. Computer hardwareTK7885-7895ENIET Circuits, Devices and Systems, Vol 15, Iss 1, Pp 20-26 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Computer engineering. Computer hardware TK7885-7895
spellingShingle	Computer engineering. Computer hardware TK7885-7895 Qing‐Hao Hu Wen‐Sheng Zhao Kai Fu Da‐Wei Wang Gaofeng Wang On the applicability of two‐bit carbon nanotube through‐silicon via for power distribution networks in 3‐D integrated circuits
description	Abstract This study investigates the possibility of the carbon nanotube (CNT)‐based through‐silicon vias (TSVs) for improving power integrity of 3‐D integrated circuits (3‐D ICs). The circuit model is developed for 2‐bit CNT TSV and validated through the full‐wave electromagnetic simulator HFSS simulations. The 2‐bit CNT TSV is applied to power distribution networks (PDNs) by combining the validated equivalent‐circuit model and that TSV‐based PDN impedance is compared with the traditional one. By virtue of the large capacitance and low inductance of the 2‐bit CNT TSV, the PDN impedance of the 3‐D IC can be suppressed significantly and the anti‐resonant frequency can be increased.
format	article
author	Qing‐Hao Hu Wen‐Sheng Zhao Kai Fu Da‐Wei Wang Gaofeng Wang
author_facet	Qing‐Hao Hu Wen‐Sheng Zhao Kai Fu Da‐Wei Wang Gaofeng Wang
author_sort	Qing‐Hao Hu
title	On the applicability of two‐bit carbon nanotube through‐silicon via for power distribution networks in 3‐D integrated circuits
title_short	On the applicability of two‐bit carbon nanotube through‐silicon via for power distribution networks in 3‐D integrated circuits
title_full	On the applicability of two‐bit carbon nanotube through‐silicon via for power distribution networks in 3‐D integrated circuits
title_fullStr	On the applicability of two‐bit carbon nanotube through‐silicon via for power distribution networks in 3‐D integrated circuits
title_full_unstemmed	On the applicability of two‐bit carbon nanotube through‐silicon via for power distribution networks in 3‐D integrated circuits
title_sort	on the applicability of two‐bit carbon nanotube through‐silicon via for power distribution networks in 3‐d integrated circuits
publisher	Wiley
publishDate	2021
url	https://doaj.org/article/a3fad4e435e64d8298c1e9542ad73353
work_keys_str_mv	AT qinghaohu ontheapplicabilityoftwobitcarbonnanotubethroughsiliconviaforpowerdistributionnetworksin3dintegratedcircuits AT wenshengzhao ontheapplicabilityoftwobitcarbonnanotubethroughsiliconviaforpowerdistributionnetworksin3dintegratedcircuits AT kaifu ontheapplicabilityoftwobitcarbonnanotubethroughsiliconviaforpowerdistributionnetworksin3dintegratedcircuits AT daweiwang ontheapplicabilityoftwobitcarbonnanotubethroughsiliconviaforpowerdistributionnetworksin3dintegratedcircuits AT gaofengwang ontheapplicabilityoftwobitcarbonnanotubethroughsiliconviaforpowerdistributionnetworksin3dintegratedcircuits
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On the applicability of two‐bit carbon nanotube through‐silicon via for power distribution networks in 3‐D integrated circuits

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