On the applicability of two‐bit carbon nanotube through‐silicon via for power distribution networks in 3‐D integrated circuits
Abstract This study investigates the possibility of the carbon nanotube (CNT)‐based through‐silicon vias (TSVs) for improving power integrity of 3‐D integrated circuits (3‐D ICs). The circuit model is developed for 2‐bit CNT TSV and validated through the full‐wave electromagnetic simulator HFSS simu...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Wiley
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/a3fad4e435e64d8298c1e9542ad73353 |
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