Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO2 single crystals

Abstract The development of dielectric materials with colossal permittivity is important for the miniaturization of electronic devices and fabrication of high-density energy-storage devices. The electron-pinned defect-dipoles has been recently proposed to boost the permittivity of (Nb + In) co-doped...

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Autores principales:	Masaru Kawarasaki, Kenji Tanabe, Ichiro Terasaki, Yasuhiro Fujii, Hiroki Taniguchi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/a46319d073ff44dc9c02e310d0e9d9f4
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spelling	oai:doaj.org-article:a46319d073ff44dc9c02e310d0e9d9f42021-12-02T11:41:02ZIntrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO2 single crystals10.1038/s41598-017-05651-z2045-2322https://doaj.org/article/a46319d073ff44dc9c02e310d0e9d9f42017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05651-zhttps://doaj.org/toc/2045-2322Abstract The development of dielectric materials with colossal permittivity is important for the miniaturization of electronic devices and fabrication of high-density energy-storage devices. The electron-pinned defect-dipoles has been recently proposed to boost the permittivity of (Nb + In) co-doped TiO2 to 105. However, the follow-up studies suggest an extrinsic contribution to the colossal permittivity from thermally excited carriers. Herein, we demonstrate a marked enhancement in the permittivity of (Nb + In) co-doped TiO2 single crystals at sufficiently low temperatures such that the thermally excited carriers are frozen out and exert no influence on the dielectric response. The results indicate that the permittivity attains quadruple of that for pure TiO2. This finding suggests that the electron-pinned defect-dipoles add an extra dielectric response to that of the TiO2 host matrix. The results offer a novel approach for the development of functional dielectric materials with large permittivity by engineering complex defects into bulk materials.Masaru KawarasakiKenji TanabeIchiro TerasakiYasuhiro FujiiHiroki TaniguchiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Masaru Kawarasaki Kenji Tanabe Ichiro Terasaki Yasuhiro Fujii Hiroki Taniguchi Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO2 single crystals
description	Abstract The development of dielectric materials with colossal permittivity is important for the miniaturization of electronic devices and fabrication of high-density energy-storage devices. The electron-pinned defect-dipoles has been recently proposed to boost the permittivity of (Nb + In) co-doped TiO2 to 105. However, the follow-up studies suggest an extrinsic contribution to the colossal permittivity from thermally excited carriers. Herein, we demonstrate a marked enhancement in the permittivity of (Nb + In) co-doped TiO2 single crystals at sufficiently low temperatures such that the thermally excited carriers are frozen out and exert no influence on the dielectric response. The results indicate that the permittivity attains quadruple of that for pure TiO2. This finding suggests that the electron-pinned defect-dipoles add an extra dielectric response to that of the TiO2 host matrix. The results offer a novel approach for the development of functional dielectric materials with large permittivity by engineering complex defects into bulk materials.
format	article
author	Masaru Kawarasaki Kenji Tanabe Ichiro Terasaki Yasuhiro Fujii Hiroki Taniguchi
author_facet	Masaru Kawarasaki Kenji Tanabe Ichiro Terasaki Yasuhiro Fujii Hiroki Taniguchi
author_sort	Masaru Kawarasaki
title	Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO2 single crystals
title_short	Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO2 single crystals
title_full	Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO2 single crystals
title_fullStr	Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO2 single crystals
title_full_unstemmed	Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO2 single crystals
title_sort	intrinsic enhancement of dielectric permittivity in (nb + in) co-doped tio2 single crystals
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/a46319d073ff44dc9c02e310d0e9d9f4
work_keys_str_mv	AT masarukawarasaki intrinsicenhancementofdielectricpermittivityinnbincodopedtio2singlecrystals AT kenjitanabe intrinsicenhancementofdielectricpermittivityinnbincodopedtio2singlecrystals AT ichiroterasaki intrinsicenhancementofdielectricpermittivityinnbincodopedtio2singlecrystals AT yasuhirofujii intrinsicenhancementofdielectricpermittivityinnbincodopedtio2singlecrystals AT hirokitaniguchi intrinsicenhancementofdielectricpermittivityinnbincodopedtio2singlecrystals
_version_	1718395476806467584

Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO2 single crystals

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