Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO2 single crystals

Abstract The development of dielectric materials with colossal permittivity is important for the miniaturization of electronic devices and fabrication of high-density energy-storage devices. The electron-pinned defect-dipoles has been recently proposed to boost the permittivity of (Nb + In) co-doped...

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Bibliographic Details
Main Authors: Masaru Kawarasaki, Kenji Tanabe, Ichiro Terasaki, Yasuhiro Fujii, Hiroki Taniguchi
Format: article
Language:EN
Published: Nature Portfolio 2017
Subjects:
R
Q
Online Access:https://doaj.org/article/a46319d073ff44dc9c02e310d0e9d9f4
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