Large Negative Photoresistivity in Amorphous NdNiO<sub>3</sub> Film
A significant decrease in resistivity by 55% under blue lighting with ~0.4 J·mm<sup>−2</sup> energy density is demonstrated in amorphous film of metal-insulator NdNiO<sub>3</sub> at room temperature. This large negative photoresistivity contrasts with a small positive photore...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/a47145aae14a40ebb5174df088c97daf |
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| Sumario: | A significant decrease in resistivity by 55% under blue lighting with ~0.4 J·mm<sup>−2</sup> energy density is demonstrated in amorphous film of metal-insulator NdNiO<sub>3</sub> at room temperature. This large negative photoresistivity contrasts with a small positive photoresistivity of 8% in epitaxial NdNiO<sub>3</sub> film under the same illumination conditions. The magnitude of the photoresistivity rises with the increasing power density or decreasing wavelength of light. By combining the analysis of the observed photoresistive effect with optical absorption and the resistivity of the films as a function of temperature, it is shown that photo-stimulated heating determines the photoresistivity in both types of films. Because amorphous films can be easily grown on a wide range of substrates, the demonstrated large photo(thermo)resistivity in such films is attractive for potential applications, e.g., thermal photodetectors and thermistors. |
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