Current transport mechanisms in ITO/nSI structures

Código QR

Current transport mechanisms in ITO/nSI structures

Guardado en:

Detalles Bibliográficos
Autores principales:	Şerban, Dormidont, Simaşchevici, Alexei, Bruc, Leonid, Feodorov, Vladimir, Usatîi, Iurie
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2009
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/a481da16cb594d7b9e232bff0ae184e7
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

Efficient low-cost solar cells based on ITO-nSi
por: Curmei, Nicolai
Publicado: (2016)

Estimation of solar cell parameters in view of solar radiation spectral structure
por: Şerban, Dormidont, et al.
Publicado: (2009)

Indentation size effect in ITO/Si planar structure under concentrated load action
por: Harea, Evghenii
Publicado: (2007)

Academician alexei v. simashkevich – 85th jubilee
por: Şerban, Dormidont, et al.
Publicado: (2014)

Pecvd in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics
por: Usatîi, Iurie, et al.
Publicado: (2009)

Foundation of Moldovan school of experimental semiconductor physics
por: Simaşchevici, Alexei, et al.
Publicado: (2017)

On the 100th anniversary from the birth of professor Mikhail Vasilievich Kot
por: Simaşchevici, Alexei, et al.
Publicado: (2014)

Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures
por: Kira L. Enisherlova, et al.
Publicado: (2021)

A highly efficient bridge inverter with doubled output voltage
por: Sainsus, Iurie, et al.
Publicado: (2019)

An uninterruptible power system containing a bridge inverter combined with a battery charging unit
por: Sainsus, Iurie, et al.
Publicado: (2019)

Influence of defect composition on optical activity of Mn2+ ions in ZnS crystals
por: Korotkov, Vitalii, et al.
Publicado: (2005)

Corrosion of indium doped E-AlMgSi aluminum conductor alloy (Aldrey)
por: Izatullo N. Ganiev, et al.
Publicado: (2021)

Thin AIN films growth on Si (III) by hydride vapor phase epitaxy
por: Gorceac, Leonid, et al.
Publicado: (2008)

The electrical transport mechanism in the (nCdS–рAs2Se3) heterojunctions
por: Goglidze, Tatiana, et al.
Publicado: (2008)

Polynomial inequalities for multipartite quantum systems in mixed states
por: Palii, Iurie
Publicado: (2018)

Nanowire-based electronic and optoelectronic devices
por: Dubcoveţchi, Iurie
Publicado: (2015)

Comparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens
por: Tatyana G. Yugova, et al.
Publicado: (2021)

Temperature dependence of photoinduced absorption in As2S3 glass fibers
por: Culeac, Ion, et al.
Publicado: (2007)

Comparative analysis of leakage current suppression capability of forward‐clamped and reverse‐clamped H10 three‐phase inverters
por: Haixiao Ma, et al.
Publicado: (2021)

Tailoring electron and phonon energy dispersion and thermal transport in nano- and microarchitectures
por: Fomin, Vladimir
Publicado: (2018)

Crystalline and molecular structure of ETHYLENACETAL-1-(3,3-DIMETHYL-2 OXOBUTYL)-2,3-INDOLINEDIONE
por: Antoseac, Boris, et al.
Publicado: (2007)

Metal oximates: an old platform for modern crystal design
por: Croitor, Lilia, et al.
Publicado: (2009)

Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness
por: Andrey N. Aleshin, et al.
Publicado: (2021)

Lead chalcogenide IR-emitters and detectors on Si-substrates
por: Zogg, H., et al.
Publicado: (2006)

Unconventional metal-insulator transition in RexSi1-x
por: Aruşanov, Ernest, et al.
Publicado: (2010)

Nano- and microscratching as a potential method for texturing the Si surface
por: Prisăcaru, Andrian, et al.
Publicado: (2014)

Advances in Public Transport Platform for the Development of Sustainability Cities
por: Juan M. Corchado, et al.
Publicado: (2021)

Hopping conductivity and spectrum of localized carriers in β-FeSi:Mn
por: Aruşanov, Ernest, et al.
Publicado: (2009)

Ellipsometric studies of nanometric CdS and CdTe films
por: Caraman, Mihail, et al.
Publicado: (2005)

Methods of trichlorosilane synthesis for polycrystalline silicon production. Part 2: Hydrochlorination and redistribution
por: Vladimir N. Jarkin, et al.
Publicado: (2021)

Methods of trichlorosilane synthesis for polycrystalline silicon production. Part 1: Direct synthesis
por: Vladimir N. Jarkin, et al.
Publicado: (2021)

Some trends in current photovoltaics
por: Strebcov, D., et al.
Publicado: (2013)

Variable range-hopping conductivity in Cu2ZnSiSe4
por: Guc, Maxim
Publicado: (2013)

HTSC – Si and HTSC – InSb contacts for diode detectors: comparison of characteristics
por: Cherner, Iacov
Publicado: (2006)

A fiber optic intrusion monitoring system
por: Culeac, Ion, et al.
Publicado: (2013)

Emitter doping influence on electrical performance of C-Si cells under concentrated light
por: Bobeico, Eugenia, et al.
Publicado: (2007)

Electron - phonon interaction in strongly correlated systems. Acoustical phonon case
por: Digor, Dumitru, et al.
Publicado: (2005)

Scattering mechanisms of charge carriers in gallium antimonide doped with iron
por: Gheorghiţă, Eugen, et al.
Publicado: (2008)

External Sq currents in the West African region
por: Obiekezie, T., et al.
Publicado: (2010)

Nanomeshed Si nanomembranes
por: Xun Han, et al.
Publicado: (2019)