Rear side dielectrics on interdigitating p+-(i)-n+ back-contact solar cells − hydrogenation vs. charge effects

Polysilicon-on-oxide (POLO) passivating contacts and interdigitated back-contact (IBC) cell technologies have recently attracted a lot of interest as candidates for the implementation in the next generation of solar cells. An IBC cell with POLO junctions for both polarities − a POLO2-IBC cell − has...

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Autores principales:	Rienäcker Michael, Larionova Yevgeniya, Krügener Jan, Wolter Sascha, Brendel Rolf, Peibst Robby
Formato:	article
Lenguaje:	EN
Publicado:	EDP Sciences 2021
Materias:	polo ibc hydrogenation charge recombination passivating contact polysilicon Renewable energy sources TJ807-830
Acceso en línea:	https://doaj.org/article/a53a4abacfde4d1e8f3260d122cab35d
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spelling	oai:doaj.org-article:a53a4abacfde4d1e8f3260d122cab35d2021-11-12T11:44:56ZRear side dielectrics on interdigitating p+-(i)-n+ back-contact solar cells − hydrogenation vs. charge effects2105-071610.1051/epjpv/2021007https://doaj.org/article/a53a4abacfde4d1e8f3260d122cab35d2021-01-01T00:00:00Zhttps://www.epj-pv.org/articles/epjpv/full_html/2021/01/pv210040/pv210040.htmlhttps://doaj.org/toc/2105-0716Polysilicon-on-oxide (POLO) passivating contacts and interdigitated back-contact (IBC) cell technologies have recently attracted a lot of interest as candidates for the implementation in the next generation of solar cells. An IBC cell with POLO junctions for both polarities − a POLO2-IBC cell − has to electrically isolate the highly defective p+ and n+ poly-Si regions on the rear side of the cell to avoid parasitic recombination. Inserting an initially undoped, intrinsic (i) region between the p+ and n+ poly-Si regions was demonstrated to successfully prevent the parasitic recombination in the transition region of ISFH's 26.1%-efficient POLO2-IBC cell. In order to further improve the conversion efficiency towards 27%, we apply hydrogen-donating dielectric layer stacks to the p+-(i)-n+ POLO interdigitating rear side to enhance the passivation quality of the POLO junctions. We indeed show a significant improvement of POLO junctions on symmetrical full-area homogenously doped reference samples, but when we apply a hydrogen-donating layer stack on the p+-(i)-n+ POLO interdigitating rear side, we observe a strong degradation in the performance of the POLO2-IBC cell. We attribute this to the formation of a conductive channel between the p+ and n+ poly-Si regions due to the strong negative charge density of the hydrogen-donating layer stack.Rienäcker MichaelLarionova YevgeniyaKrügener JanWolter SaschaBrendel RolfPeibst RobbyEDP Sciencesarticlepoloibchydrogenationchargerecombinationpassivating contactpolysiliconRenewable energy sourcesTJ807-830ENEPJ Photovoltaics, Vol 12, p 6 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	polo ibc hydrogenation charge recombination passivating contact polysilicon Renewable energy sources TJ807-830
spellingShingle	polo ibc hydrogenation charge recombination passivating contact polysilicon Renewable energy sources TJ807-830 Rienäcker Michael Larionova Yevgeniya Krügener Jan Wolter Sascha Brendel Rolf Peibst Robby Rear side dielectrics on interdigitating p+-(i)-n+ back-contact solar cells − hydrogenation vs. charge effects
description	Polysilicon-on-oxide (POLO) passivating contacts and interdigitated back-contact (IBC) cell technologies have recently attracted a lot of interest as candidates for the implementation in the next generation of solar cells. An IBC cell with POLO junctions for both polarities − a POLO2-IBC cell − has to electrically isolate the highly defective p+ and n+ poly-Si regions on the rear side of the cell to avoid parasitic recombination. Inserting an initially undoped, intrinsic (i) region between the p+ and n+ poly-Si regions was demonstrated to successfully prevent the parasitic recombination in the transition region of ISFH's 26.1%-efficient POLO2-IBC cell. In order to further improve the conversion efficiency towards 27%, we apply hydrogen-donating dielectric layer stacks to the p+-(i)-n+ POLO interdigitating rear side to enhance the passivation quality of the POLO junctions. We indeed show a significant improvement of POLO junctions on symmetrical full-area homogenously doped reference samples, but when we apply a hydrogen-donating layer stack on the p+-(i)-n+ POLO interdigitating rear side, we observe a strong degradation in the performance of the POLO2-IBC cell. We attribute this to the formation of a conductive channel between the p+ and n+ poly-Si regions due to the strong negative charge density of the hydrogen-donating layer stack.
format	article
author	Rienäcker Michael Larionova Yevgeniya Krügener Jan Wolter Sascha Brendel Rolf Peibst Robby
author_facet	Rienäcker Michael Larionova Yevgeniya Krügener Jan Wolter Sascha Brendel Rolf Peibst Robby
author_sort	Rienäcker Michael
title	Rear side dielectrics on interdigitating p+-(i)-n+ back-contact solar cells − hydrogenation vs. charge effects
title_short	Rear side dielectrics on interdigitating p+-(i)-n+ back-contact solar cells − hydrogenation vs. charge effects
title_full	Rear side dielectrics on interdigitating p+-(i)-n+ back-contact solar cells − hydrogenation vs. charge effects
title_fullStr	Rear side dielectrics on interdigitating p+-(i)-n+ back-contact solar cells − hydrogenation vs. charge effects
title_full_unstemmed	Rear side dielectrics on interdigitating p+-(i)-n+ back-contact solar cells − hydrogenation vs. charge effects
title_sort	rear side dielectrics on interdigitating p+-(i)-n+ back-contact solar cells − hydrogenation vs. charge effects
publisher	EDP Sciences
publishDate	2021
url	https://doaj.org/article/a53a4abacfde4d1e8f3260d122cab35d
work_keys_str_mv	AT rienackermichael rearsidedielectricsoninterdigitatingpinbackcontactsolarcellshydrogenationvschargeeffects AT larionovayevgeniya rearsidedielectricsoninterdigitatingpinbackcontactsolarcellshydrogenationvschargeeffects AT krugenerjan rearsidedielectricsoninterdigitatingpinbackcontactsolarcellshydrogenationvschargeeffects AT woltersascha rearsidedielectricsoninterdigitatingpinbackcontactsolarcellshydrogenationvschargeeffects AT brendelrolf rearsidedielectricsoninterdigitatingpinbackcontactsolarcellshydrogenationvschargeeffects AT peibstrobby rearsidedielectricsoninterdigitatingpinbackcontactsolarcellshydrogenationvschargeeffects
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Rear side dielectrics on interdigitating p+-(i)-n+ back-contact solar cells − hydrogenation vs. charge effects

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