Extraction of Preisach model parameters for fluorite-structure ferroelectrics and antiferroelectrics

Extraction of Preisach model parameters for fluorite-structure ferroelectrics and antiferroelectrics

Abstract Flourite-structure ferroelectrics (FEs) and antiferroelectrics (AFEs) such as HfO2 and its variants have gained copious attention from the semiconductor community, because they enable complementary metal-oxide-semiconductor (CMOS)-compatible platforms for high-density, high-performance non-...

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Autores principales: Zheng Wang, Jae Hur, Nujhat Tasneem, Winston Chern, Shimeng Yu, Asif Khan
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Medicine
R
Science
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Acceso en línea:https://doaj.org/article/a54ea8f3c3e94176a2b9cbf6d98f838f
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