Research on Temperature Characteristics of the Band Gap of InAlSb

Based on the classical Varshni model, the empirical relationship Eg (x, T) of the energy band value Eg of In1-xAlxSb with Al composition and temperature is proposed, and the validity of the formula is verified by the existing literature data. Experimentally, an InAlSb epitaxial layer with p +-p+ -n-...

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Autor principal:	Zhang Hongfei, Yang Jinkun, Chen Gang, Li Mo
Formato:	article
Lenguaje:	ZH
Publicado:	Editorial Office of Aero Weaponry 2021
Materias:	\|inalsb\|band gap\|mbe\|spectral response\|temperature characteristics\|infrared detector Motor vehicles. Aeronautics. Astronautics TL1-4050
Acceso en línea:	https://doaj.org/article/a5807b1443494425b7b5a0822a0205f0
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spelling	oai:doaj.org-article:a5807b1443494425b7b5a0822a0205f02021-11-30T00:13:41ZResearch on Temperature Characteristics of the Band Gap of InAlSb1673-504810.12132/ISSN.1673-5048.2020.0156https://doaj.org/article/a5807b1443494425b7b5a0822a0205f02021-06-01T00:00:00Zhttps://www.aeroweaponry.avic.com/fileup/1673-5048/PDF/1628469370087-73278384.pdfhttps://doaj.org/toc/1673-5048Based on the classical Varshni model, the empirical relationship Eg (x, T) of the energy band value Eg of In1-xAlxSb with Al composition and temperature is proposed, and the validity of the formula is verified by the existing literature data. Experimentally, an InAlSb epitaxial layer with p +-p+ -n-n+ barrier structure is grown on InSb (100) substrate by molecular beam epitaxy. The crystal quality and Al composition of the material are tested and characterized by high-resolution X-ray diffraction, and the Al composition is calculated to be 2.8%. Then, the InAlSb material is prepared as an infrared detector diode and the spectral response curve under 77~260 K is measured, thereby the relationship between the energy band value of the In0.972Al0.028Sb material and the temperature can be calculated. The data are basically consistent with the theoretical derivation. The determination of the relationship between InAlSb energy band value, Al composition and temperature can provide necessary theoretical support for the design of the detector material structure.Zhang Hongfei, Yang Jinkun, Chen Gang, Li MoEditorial Office of Aero Weaponryarticle\|inalsb\|band gap\|mbe\|spectral response\|temperature characteristics\|infrared detectorMotor vehicles. Aeronautics. AstronauticsTL1-4050ZHHangkong bingqi, Vol 28, Iss 3, Pp 105-108 (2021)
institution	DOAJ
collection	DOAJ
language	ZH
topic	\|inalsb\|band gap\|mbe\|spectral response\|temperature characteristics\|infrared detector Motor vehicles. Aeronautics. Astronautics TL1-4050
spellingShingle	\|inalsb\|band gap\|mbe\|spectral response\|temperature characteristics\|infrared detector Motor vehicles. Aeronautics. Astronautics TL1-4050 Zhang Hongfei, Yang Jinkun, Chen Gang, Li Mo Research on Temperature Characteristics of the Band Gap of InAlSb
description	Based on the classical Varshni model, the empirical relationship Eg (x, T) of the energy band value Eg of In1-xAlxSb with Al composition and temperature is proposed, and the validity of the formula is verified by the existing literature data. Experimentally, an InAlSb epitaxial layer with p +-p+ -n-n+ barrier structure is grown on InSb (100) substrate by molecular beam epitaxy. The crystal quality and Al composition of the material are tested and characterized by high-resolution X-ray diffraction, and the Al composition is calculated to be 2.8%. Then, the InAlSb material is prepared as an infrared detector diode and the spectral response curve under 77~260 K is measured, thereby the relationship between the energy band value of the In0.972Al0.028Sb material and the temperature can be calculated. The data are basically consistent with the theoretical derivation. The determination of the relationship between InAlSb energy band value, Al composition and temperature can provide necessary theoretical support for the design of the detector material structure.
format	article
author	Zhang Hongfei, Yang Jinkun, Chen Gang, Li Mo
author_facet	Zhang Hongfei, Yang Jinkun, Chen Gang, Li Mo
author_sort	Zhang Hongfei, Yang Jinkun, Chen Gang, Li Mo
title	Research on Temperature Characteristics of the Band Gap of InAlSb
title_short	Research on Temperature Characteristics of the Band Gap of InAlSb
title_full	Research on Temperature Characteristics of the Band Gap of InAlSb
title_fullStr	Research on Temperature Characteristics of the Band Gap of InAlSb
title_full_unstemmed	Research on Temperature Characteristics of the Band Gap of InAlSb
title_sort	research on temperature characteristics of the band gap of inalsb
publisher	Editorial Office of Aero Weaponry
publishDate	2021
url	https://doaj.org/article/a5807b1443494425b7b5a0822a0205f0
work_keys_str_mv	AT zhanghongfeiyangjinkunchenganglimo researchontemperaturecharacteristicsofthebandgapofinalsb
_version_	1718406882145599488

Research on Temperature Characteristics of the Band Gap of InAlSb

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