Electronic structure and magnetic properties of diluted magnetic semiconductors Pb1-XVXTe

The galvanomagnetic effects, the temperature and magnetic field dependences of mag- netization and electron paramagnetic resonance (EPR) in the Pb1-xVxTe (x ≤ 0.02) alloys under variation of the alloy composition have been investigated. Low temperature activation range of the impurity conductivit...

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Autores principales: Skipetrov, E., Zvereva, E., Primenko, A., Savelieva, O., Piciughin, N., Golovanov, A., Gorbaciov, V., Zlomanov, V., Vinokurov, A.
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Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2009
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spelling oai:doaj.org-article:a67854b4148b4ef1842e974edb700e592021-11-21T12:05:51ZElectronic structure and magnetic properties of diluted magnetic semiconductors Pb1-XVXTe2537-63651810-648Xhttps://doaj.org/article/a67854b4148b4ef1842e974edb700e592009-02-01T00:00:00Zhttps://mjps.nanotech.md/archive/2009/article/4022https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The galvanomagnetic effects, the temperature and magnetic field dependences of mag- netization and electron paramagnetic resonance (EPR) in the Pb1-xVxTe (x ≤ 0.02) alloys under variation of the alloy composition have been investigated. Low temperature activation range of the impurity conductivity on the temperature dependences of the resistivity and the Hall coefficient has been revealed and attributed to the appearance of vanadium-induced deep level in the gap of the alloys. The magnetic susceptibility was found to be a superposition of the matrix diamagnetism and Curie-Weiss paramagnetism provided by vanadium impurity ions. EPR spectra were measured and the g-factor in the temperature range 85-200 K was obtained. Skipetrov, E.Zvereva, E.Primenko, A.Savelieva, O.Piciughin, N.Golovanov, A.Gorbaciov, V.Zlomanov, V.Vinokurov, A.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 8, Iss 1, Pp 63-67 (2009)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Skipetrov, E.
Zvereva, E.
Primenko, A.
Savelieva, O.
Piciughin, N.
Golovanov, A.
Gorbaciov, V.
Zlomanov, V.
Vinokurov, A.
Electronic structure and magnetic properties of diluted magnetic semiconductors Pb1-XVXTe
description The galvanomagnetic effects, the temperature and magnetic field dependences of mag- netization and electron paramagnetic resonance (EPR) in the Pb1-xVxTe (x ≤ 0.02) alloys under variation of the alloy composition have been investigated. Low temperature activation range of the impurity conductivity on the temperature dependences of the resistivity and the Hall coefficient has been revealed and attributed to the appearance of vanadium-induced deep level in the gap of the alloys. The magnetic susceptibility was found to be a superposition of the matrix diamagnetism and Curie-Weiss paramagnetism provided by vanadium impurity ions. EPR spectra were measured and the g-factor in the temperature range 85-200 K was obtained.
format article
author Skipetrov, E.
Zvereva, E.
Primenko, A.
Savelieva, O.
Piciughin, N.
Golovanov, A.
Gorbaciov, V.
Zlomanov, V.
Vinokurov, A.
author_facet Skipetrov, E.
Zvereva, E.
Primenko, A.
Savelieva, O.
Piciughin, N.
Golovanov, A.
Gorbaciov, V.
Zlomanov, V.
Vinokurov, A.
author_sort Skipetrov, E.
title Electronic structure and magnetic properties of diluted magnetic semiconductors Pb1-XVXTe
title_short Electronic structure and magnetic properties of diluted magnetic semiconductors Pb1-XVXTe
title_full Electronic structure and magnetic properties of diluted magnetic semiconductors Pb1-XVXTe
title_fullStr Electronic structure and magnetic properties of diluted magnetic semiconductors Pb1-XVXTe
title_full_unstemmed Electronic structure and magnetic properties of diluted magnetic semiconductors Pb1-XVXTe
title_sort electronic structure and magnetic properties of diluted magnetic semiconductors pb1-xvxte
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2009
url https://doaj.org/article/a67854b4148b4ef1842e974edb700e59
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