Thermoelectric power in single crystal microwires of PbTe.
Results of the measurements of thermoelectric properties of thin semiconductor mi- crowires of PbTe (d = 5 ÷ 100 μm) obtained from solution melt by the quartz capillary filling followed by material crystallization are presented for the temperature region 4.2 ÷ 300 K. For the all samples, a sharp...
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| Autores principales: | , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2008
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/a6a49df4af414ce884bdde0743bbf898 |
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| Sumario: | Results of the measurements of thermoelectric properties of thin semiconductor mi-
crowires of PbTe (d = 5 ÷ 100 μm) obtained from solution melt by the quartz capillary filling
followed by material crystallization are presented for the temperature region 4.2 ÷ 300 K. For
the all samples, a sharp peak at the temperature 30 TK ≈ is observed. The value of this peak
depends on diameter of microwires. It is supposed that at the temperatures below 40 K the total
thermoelectric power is determined to a certain degree by the phonon drag of holes and dependence of the thermoelectric power value is caused by the size effect. |
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