Thermoelectric power in single crystal microwires of PbTe.

Results of the measurements of thermoelectric properties of thin semiconductor mi- crowires of PbTe (d = 5 ÷ 100 μm) obtained from solution melt by the quartz capillary filling followed by material crystallization are presented for the temperature region 4.2 ÷ 300 K. For the all samples, a sharp...

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Autores principales:	Canţer, Valeriu, Zasaviţchi, Efim
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2008
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/a6a49df4af414ce884bdde0743bbf898
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spelling	oai:doaj.org-article:a6a49df4af414ce884bdde0743bbf8982021-11-21T12:07:00ZThermoelectric power in single crystal microwires of PbTe. 2537-63651810-648Xhttps://doaj.org/article/a6a49df4af414ce884bdde0743bbf8982008-04-01T00:00:00Zhttps://mjps.nanotech.md/archive/2008/article/3796https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Results of the measurements of thermoelectric properties of thin semiconductor mi- crowires of PbTe (d = 5 ÷ 100 μm) obtained from solution melt by the quartz capillary filling followed by material crystallization are presented for the temperature region 4.2 ÷ 300 K. For the all samples, a sharp peak at the temperature 30 TK ≈ is observed. The value of this peak depends on diameter of microwires. It is supposed that at the temperatures below 40 K the total thermoelectric power is determined to a certain degree by the phonon drag of holes and dependence of the thermoelectric power value is caused by the size effect. Canţer, ValeriuZasaviţchi, EfimD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 7, Iss 2, Pp 158-163 (2008)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Canţer, Valeriu Zasaviţchi, Efim Thermoelectric power in single crystal microwires of PbTe.
description	Results of the measurements of thermoelectric properties of thin semiconductor mi- crowires of PbTe (d = 5 ÷ 100 μm) obtained from solution melt by the quartz capillary filling followed by material crystallization are presented for the temperature region 4.2 ÷ 300 K. For the all samples, a sharp peak at the temperature 30 TK ≈ is observed. The value of this peak depends on diameter of microwires. It is supposed that at the temperatures below 40 K the total thermoelectric power is determined to a certain degree by the phonon drag of holes and dependence of the thermoelectric power value is caused by the size effect.
format	article
author	Canţer, Valeriu Zasaviţchi, Efim
author_facet	Canţer, Valeriu Zasaviţchi, Efim
author_sort	Canţer, Valeriu
title	Thermoelectric power in single crystal microwires of PbTe.
title_short	Thermoelectric power in single crystal microwires of PbTe.
title_full	Thermoelectric power in single crystal microwires of PbTe.
title_fullStr	Thermoelectric power in single crystal microwires of PbTe.
title_full_unstemmed	Thermoelectric power in single crystal microwires of PbTe.
title_sort	thermoelectric power in single crystal microwires of pbte.
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2008
url	https://doaj.org/article/a6a49df4af414ce884bdde0743bbf898
work_keys_str_mv	AT cantervaleriu thermoelectricpowerinsinglecrystalmicrowiresofpbte AT zasavitchiefim thermoelectricpowerinsinglecrystalmicrowiresofpbte
_version_	1718419203718905856

Thermoelectric power in single crystal microwires of PbTe.

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