Recovery of Alumina Nanocapacitors after High Voltage Breakdown

Abstract Breakdown of a dielectric material at high electric fields significantly limits the applicability of metal-dielectric-metal capacitors for energy storage applications. Here we demonstrate that the insulating properties of atomic-layer-deposited Al2O3 thin films in Al/Al2O3/Al trilayers can...

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Autores principales:	A. Belkin, A. Bezryadin, L. Hendren, A. Hubler
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/a6df1437b5114d1cb5c5aaa4957ff586
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spelling	oai:doaj.org-article:a6df1437b5114d1cb5c5aaa4957ff5862021-12-02T15:06:24ZRecovery of Alumina Nanocapacitors after High Voltage Breakdown10.1038/s41598-017-01007-92045-2322https://doaj.org/article/a6df1437b5114d1cb5c5aaa4957ff5862017-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-01007-9https://doaj.org/toc/2045-2322Abstract Breakdown of a dielectric material at high electric fields significantly limits the applicability of metal-dielectric-metal capacitors for energy storage applications. Here we demonstrate that the insulating properties of atomic-layer-deposited Al2O3 thin films in Al/Al2O3/Al trilayers can recover after the breakdown. The recovery has been observed in samples with the dielectric thickness spanning from 4 to 9 nm. This phenomenon holds promise for a new generation of capacitors capable of restoring their properties after the dielectric breakdown. Also, if employed in capacitor banks, the recovery process will ensure that the bank remains operational even if a breakdown occurs.A. BelkinA. BezryadinL. HendrenA. HublerNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q A. Belkin A. Bezryadin L. Hendren A. Hubler Recovery of Alumina Nanocapacitors after High Voltage Breakdown
description	Abstract Breakdown of a dielectric material at high electric fields significantly limits the applicability of metal-dielectric-metal capacitors for energy storage applications. Here we demonstrate that the insulating properties of atomic-layer-deposited Al2O3 thin films in Al/Al2O3/Al trilayers can recover after the breakdown. The recovery has been observed in samples with the dielectric thickness spanning from 4 to 9 nm. This phenomenon holds promise for a new generation of capacitors capable of restoring their properties after the dielectric breakdown. Also, if employed in capacitor banks, the recovery process will ensure that the bank remains operational even if a breakdown occurs.
format	article
author	A. Belkin A. Bezryadin L. Hendren A. Hubler
author_facet	A. Belkin A. Bezryadin L. Hendren A. Hubler
author_sort	A. Belkin
title	Recovery of Alumina Nanocapacitors after High Voltage Breakdown
title_short	Recovery of Alumina Nanocapacitors after High Voltage Breakdown
title_full	Recovery of Alumina Nanocapacitors after High Voltage Breakdown
title_fullStr	Recovery of Alumina Nanocapacitors after High Voltage Breakdown
title_full_unstemmed	Recovery of Alumina Nanocapacitors after High Voltage Breakdown
title_sort	recovery of alumina nanocapacitors after high voltage breakdown
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/a6df1437b5114d1cb5c5aaa4957ff586
work_keys_str_mv	AT abelkin recoveryofaluminananocapacitorsafterhighvoltagebreakdown AT abezryadin recoveryofaluminananocapacitorsafterhighvoltagebreakdown AT lhendren recoveryofaluminananocapacitorsafterhighvoltagebreakdown AT ahubler recoveryofaluminananocapacitorsafterhighvoltagebreakdown
_version_	1718388470728097792

Recovery of Alumina Nanocapacitors after High Voltage Breakdown

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