Features of contact and surface processes in glassy As2Te13Ge8S3-based structures with Pt electrodes upon interaction with nitrogen dioxide

The capacitance spectra of the interdigital Pt–glassy As2Te13Ge8S3–Pt structures have been investigated in a range of 5–106 Hz with respect to temperature effects in both dry air and its mixture with a controlled concentration of nitrogen dioxide. It has been found that a decrease in the frequency o...

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Autor principal:	Ciobanu, Marina
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2017
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/a78cedb4e9bc44de826df8253dccf6ed
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spelling	oai:doaj.org-article:a78cedb4e9bc44de826df8253dccf6ed2021-11-21T11:56:53ZFeatures of contact and surface processes in glassy As2Te13Ge8S3-based structures with Pt electrodes upon interaction with nitrogen dioxide539.213.22537-63651810-648Xhttps://doaj.org/article/a78cedb4e9bc44de826df8253dccf6ed2017-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2017/article/71494https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The capacitance spectra of the interdigital Pt–glassy As2Te13Ge8S3–Pt structures have been investigated in a range of 5–106 Hz with respect to temperature effects in both dry air and its mixture with a controlled concentration of nitrogen dioxide. It has been found that a decrease in the frequency of applied voltage to 103 Hz results in a rapid increase in the capacitance by several orders of magnitude. Environmental conditions dramatically influence the capacitance at low frequencies and, together with temperature regime, control the capacitance spectra and current–voltage characteristics of the films. The results are explained in terms of formation of a Schottky–Mott barrier that controls the properties of the contact junction. The contact-free part of the chalcogenide film surface, being more conducting than the bulk, acts as a capacitor, which can be controlled by interaction with gaseous species from the environment.Ciobanu, MarinaD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 16, Iss 3-4, Pp 234-241 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Ciobanu, Marina Features of contact and surface processes in glassy As2Te13Ge8S3-based structures with Pt electrodes upon interaction with nitrogen dioxide
description	The capacitance spectra of the interdigital Pt–glassy As2Te13Ge8S3–Pt structures have been investigated in a range of 5–106 Hz with respect to temperature effects in both dry air and its mixture with a controlled concentration of nitrogen dioxide. It has been found that a decrease in the frequency of applied voltage to 103 Hz results in a rapid increase in the capacitance by several orders of magnitude. Environmental conditions dramatically influence the capacitance at low frequencies and, together with temperature regime, control the capacitance spectra and current–voltage characteristics of the films. The results are explained in terms of formation of a Schottky–Mott barrier that controls the properties of the contact junction. The contact-free part of the chalcogenide film surface, being more conducting than the bulk, acts as a capacitor, which can be controlled by interaction with gaseous species from the environment.
format	article
author	Ciobanu, Marina
author_facet	Ciobanu, Marina
author_sort	Ciobanu, Marina
title	Features of contact and surface processes in glassy As2Te13Ge8S3-based structures with Pt electrodes upon interaction with nitrogen dioxide
title_short	Features of contact and surface processes in glassy As2Te13Ge8S3-based structures with Pt electrodes upon interaction with nitrogen dioxide
title_full	Features of contact and surface processes in glassy As2Te13Ge8S3-based structures with Pt electrodes upon interaction with nitrogen dioxide
title_fullStr	Features of contact and surface processes in glassy As2Te13Ge8S3-based structures with Pt electrodes upon interaction with nitrogen dioxide
title_full_unstemmed	Features of contact and surface processes in glassy As2Te13Ge8S3-based structures with Pt electrodes upon interaction with nitrogen dioxide
title_sort	features of contact and surface processes in glassy as2te13ge8s3-based structures with pt electrodes upon interaction with nitrogen dioxide
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2017
url	https://doaj.org/article/a78cedb4e9bc44de826df8253dccf6ed
work_keys_str_mv	AT ciobanumarina featuresofcontactandsurfaceprocessesinglassyas2te13ge8s3basedstructureswithptelectrodesuponinteractionwithnitrogendioxide
_version_	1718419381930688512

Features of contact and surface processes in glassy As2Te13Ge8S3-based structures with Pt electrodes upon interaction with nitrogen dioxide

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