Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures

Abstract Van der Waals (vdW) heterostructures, consisting of a variety of low-dimensional materials, have great potential use in the design of a wide range of functional devices thanks to their atomically thin body and strong electrostatic tunability. Here, we demonstrate multi-functional indium sel...

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Autores principales:	Sang-Hoo Cho, Hanbyeol Jang, Heungsoon Im, Donghyeon Lee, Je-Ho Lee, Kenji Watanabe, Takashi Taniguchi, Maeng-Je Seong, Byoung Hun Lee, Kayoung Lee
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/a797905755f64b0bb13b20e1cba4c961
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spelling	oai:doaj.org-article:a797905755f64b0bb13b20e1cba4c9612021-12-02T14:26:13ZBias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures10.1038/s41598-021-87442-12045-2322https://doaj.org/article/a797905755f64b0bb13b20e1cba4c9612021-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-87442-1https://doaj.org/toc/2045-2322Abstract Van der Waals (vdW) heterostructures, consisting of a variety of low-dimensional materials, have great potential use in the design of a wide range of functional devices thanks to their atomically thin body and strong electrostatic tunability. Here, we demonstrate multi-functional indium selenide (InSe)/black phosphorous (BP) heterostructures encapsulated by hexagonal boron nitride. At a positive drain bias (V D), applied on the BP while the InSe is grounded, our heterostructures show an intermediate gate voltage (V BG) regime where the current hardly changes, working as a ternary transistor. By contrast, at a negative V D, the device shows strong negative differential transconductance characteristics; the peak current increases up to ~5 μA and the peak-to-valley current ratio reaches 1600 at V D = −2 V. Four-terminal measurements were performed on each layer, allowing us to separate the contributions of contact resistances and channel resistance. Moreover, multiple devices with different device structures and contacts were investigated, providing insight into the operation principle and performance optimization. We systematically investigated the influence of contact resistances, heterojunction resistance, channel resistance, and the thickness of BP on the detailed operational characteristics at different V D and V BG regimes.Sang-Hoo ChoHanbyeol JangHeungsoon ImDonghyeon LeeJe-Ho LeeKenji WatanabeTakashi TaniguchiMaeng-Je SeongByoung Hun LeeKayoung LeeNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Sang-Hoo Cho Hanbyeol Jang Heungsoon Im Donghyeon Lee Je-Ho Lee Kenji Watanabe Takashi Taniguchi Maeng-Je Seong Byoung Hun Lee Kayoung Lee Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures
description	Abstract Van der Waals (vdW) heterostructures, consisting of a variety of low-dimensional materials, have great potential use in the design of a wide range of functional devices thanks to their atomically thin body and strong electrostatic tunability. Here, we demonstrate multi-functional indium selenide (InSe)/black phosphorous (BP) heterostructures encapsulated by hexagonal boron nitride. At a positive drain bias (V D), applied on the BP while the InSe is grounded, our heterostructures show an intermediate gate voltage (V BG) regime where the current hardly changes, working as a ternary transistor. By contrast, at a negative V D, the device shows strong negative differential transconductance characteristics; the peak current increases up to ~5 μA and the peak-to-valley current ratio reaches 1600 at V D = −2 V. Four-terminal measurements were performed on each layer, allowing us to separate the contributions of contact resistances and channel resistance. Moreover, multiple devices with different device structures and contacts were investigated, providing insight into the operation principle and performance optimization. We systematically investigated the influence of contact resistances, heterojunction resistance, channel resistance, and the thickness of BP on the detailed operational characteristics at different V D and V BG regimes.
format	article
author	Sang-Hoo Cho Hanbyeol Jang Heungsoon Im Donghyeon Lee Je-Ho Lee Kenji Watanabe Takashi Taniguchi Maeng-Je Seong Byoung Hun Lee Kayoung Lee
author_facet	Sang-Hoo Cho Hanbyeol Jang Heungsoon Im Donghyeon Lee Je-Ho Lee Kenji Watanabe Takashi Taniguchi Maeng-Je Seong Byoung Hun Lee Kayoung Lee
author_sort	Sang-Hoo Cho
title	Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures
title_short	Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures
title_full	Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures
title_fullStr	Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures
title_full_unstemmed	Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures
title_sort	bias-controlled multi-functional transport properties of inse/bp van der waals heterostructures
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/a797905755f64b0bb13b20e1cba4c961
work_keys_str_mv	AT sanghoocho biascontrolledmultifunctionaltransportpropertiesofinsebpvanderwaalsheterostructures AT hanbyeoljang biascontrolledmultifunctionaltransportpropertiesofinsebpvanderwaalsheterostructures AT heungsoonim biascontrolledmultifunctionaltransportpropertiesofinsebpvanderwaalsheterostructures AT donghyeonlee biascontrolledmultifunctionaltransportpropertiesofinsebpvanderwaalsheterostructures AT jeholee biascontrolledmultifunctionaltransportpropertiesofinsebpvanderwaalsheterostructures AT kenjiwatanabe biascontrolledmultifunctionaltransportpropertiesofinsebpvanderwaalsheterostructures AT takashitaniguchi biascontrolledmultifunctionaltransportpropertiesofinsebpvanderwaalsheterostructures AT maengjeseong biascontrolledmultifunctionaltransportpropertiesofinsebpvanderwaalsheterostructures AT byounghunlee biascontrolledmultifunctionaltransportpropertiesofinsebpvanderwaalsheterostructures AT kayounglee biascontrolledmultifunctionaltransportpropertiesofinsebpvanderwaalsheterostructures
_version_	1718391387910569984

Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures

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