CuI p-type thin films for highly transparent thermoelectric p-n modules

Abstract Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials – a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different meth...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Bruno Miguel Morais Faustino, Diogo Gomes, Jaime Faria, Taneli Juntunen, Guilherme Gaspar, Catarina Bianchi, António Almeida, Ana Marques, Ilkka Tittonen, Isabel Ferreira
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
R
Q
Acceso en línea:https://doaj.org/article/a7c2025c15624c7180ed670b4b6ef344
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:a7c2025c15624c7180ed670b4b6ef344
record_format dspace
spelling oai:doaj.org-article:a7c2025c15624c7180ed670b4b6ef3442021-12-02T16:08:25ZCuI p-type thin films for highly transparent thermoelectric p-n modules10.1038/s41598-018-25106-32045-2322https://doaj.org/article/a7c2025c15624c7180ed670b4b6ef3442018-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-25106-3https://doaj.org/toc/2045-2322Abstract Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials – a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (σ = 1.1 × 104 Sm−1) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermally connected in parallel is inclosed. This configuration allows for a whole range of highly transparent thermoelectric applications.Bruno Miguel Morais FaustinoDiogo GomesJaime FariaTaneli JuntunenGuilherme GasparCatarina BianchiAntónio AlmeidaAna MarquesIlkka TittonenIsabel FerreiraNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Bruno Miguel Morais Faustino
Diogo Gomes
Jaime Faria
Taneli Juntunen
Guilherme Gaspar
Catarina Bianchi
António Almeida
Ana Marques
Ilkka Tittonen
Isabel Ferreira
CuI p-type thin films for highly transparent thermoelectric p-n modules
description Abstract Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials – a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (σ = 1.1 × 104 Sm−1) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermally connected in parallel is inclosed. This configuration allows for a whole range of highly transparent thermoelectric applications.
format article
author Bruno Miguel Morais Faustino
Diogo Gomes
Jaime Faria
Taneli Juntunen
Guilherme Gaspar
Catarina Bianchi
António Almeida
Ana Marques
Ilkka Tittonen
Isabel Ferreira
author_facet Bruno Miguel Morais Faustino
Diogo Gomes
Jaime Faria
Taneli Juntunen
Guilherme Gaspar
Catarina Bianchi
António Almeida
Ana Marques
Ilkka Tittonen
Isabel Ferreira
author_sort Bruno Miguel Morais Faustino
title CuI p-type thin films for highly transparent thermoelectric p-n modules
title_short CuI p-type thin films for highly transparent thermoelectric p-n modules
title_full CuI p-type thin films for highly transparent thermoelectric p-n modules
title_fullStr CuI p-type thin films for highly transparent thermoelectric p-n modules
title_full_unstemmed CuI p-type thin films for highly transparent thermoelectric p-n modules
title_sort cui p-type thin films for highly transparent thermoelectric p-n modules
publisher Nature Portfolio
publishDate 2018
url https://doaj.org/article/a7c2025c15624c7180ed670b4b6ef344
work_keys_str_mv AT brunomiguelmoraisfaustino cuiptypethinfilmsforhighlytransparentthermoelectricpnmodules
AT diogogomes cuiptypethinfilmsforhighlytransparentthermoelectricpnmodules
AT jaimefaria cuiptypethinfilmsforhighlytransparentthermoelectricpnmodules
AT tanelijuntunen cuiptypethinfilmsforhighlytransparentthermoelectricpnmodules
AT guilhermegaspar cuiptypethinfilmsforhighlytransparentthermoelectricpnmodules
AT catarinabianchi cuiptypethinfilmsforhighlytransparentthermoelectricpnmodules
AT antonioalmeida cuiptypethinfilmsforhighlytransparentthermoelectricpnmodules
AT anamarques cuiptypethinfilmsforhighlytransparentthermoelectricpnmodules
AT ilkkatittonen cuiptypethinfilmsforhighlytransparentthermoelectricpnmodules
AT isabelferreira cuiptypethinfilmsforhighlytransparentthermoelectricpnmodules
_version_ 1718384488341307392