Scalable and Transfer-Free Fabrication of MoS2/SiO2 Hybrid Nanophotonic Cavity Arrays with Quality Factors Exceeding 4000

Abstract We report the fully-scalable fabrication of a large array of hybrid molybdenum disulfide (MoS2) - silicon dioxide (SiO2) one-dimensional, free-standing photonic-crystal cavities capable of enhancement of the MoS2 photoluminescence at the narrow cavity resonance. We demonstrate continuous tu...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Sebastian Hammer, H. Moritz Mangold, Ariana E. Nguyen, Dominic Martinez-Ta, Sahar Naghibi Alvillar, Ludwig Bartels, Hubert J. Krenner
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/a7d1ffb8a0da46a8a05e54420a7d3b2e
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:a7d1ffb8a0da46a8a05e54420a7d3b2e
record_format	dspace
spelling	oai:doaj.org-article:a7d1ffb8a0da46a8a05e54420a7d3b2e2021-12-02T12:32:25ZScalable and Transfer-Free Fabrication of MoS2/SiO2 Hybrid Nanophotonic Cavity Arrays with Quality Factors Exceeding 400010.1038/s41598-017-07379-22045-2322https://doaj.org/article/a7d1ffb8a0da46a8a05e54420a7d3b2e2017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-07379-2https://doaj.org/toc/2045-2322Abstract We report the fully-scalable fabrication of a large array of hybrid molybdenum disulfide (MoS2) - silicon dioxide (SiO2) one-dimensional, free-standing photonic-crystal cavities capable of enhancement of the MoS2 photoluminescence at the narrow cavity resonance. We demonstrate continuous tunability of the cavity resonance wavelength across the entire emission band of MoS2 simply by variation of the photonic crystal periodicity. Device fabrication started by substrate-scale growth of MoS2 using chemical vapor deposition (CVD) on non-birefringent thermal oxide on a silicon wafer; it was followed by lithographic fabrication of a photonic crystal nanocavity array on the same substrate at more than 50% yield of functional devices. Our cavities exhibit three dominant modes with measured linewidths less than 0.2 nm, corresponding to quality factors exceeding 4000. All experimental findings are found to be in excellent agreement with finite difference time domain (FDTD) simulations. CVD MoS2 provides scalable access to a direct band gap, inorganic, stable and efficient emitter material for on-chip photonics without the need for epitaxy and is at CMOS compatible processing parameters even for back-end-of-line integration; our findings suggest feasibility of cavity based line-narrowing in MoS2-based on-chip devices as it is required for instance for frequency-multiplexed operation in on-chip optical communication and sensing.Sebastian HammerH. Moritz MangoldAriana E. NguyenDominic Martinez-TaSahar Naghibi AlvillarLudwig BartelsHubert J. KrennerNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Sebastian Hammer H. Moritz Mangold Ariana E. Nguyen Dominic Martinez-Ta Sahar Naghibi Alvillar Ludwig Bartels Hubert J. Krenner Scalable and Transfer-Free Fabrication of MoS2/SiO2 Hybrid Nanophotonic Cavity Arrays with Quality Factors Exceeding 4000
description	Abstract We report the fully-scalable fabrication of a large array of hybrid molybdenum disulfide (MoS2) - silicon dioxide (SiO2) one-dimensional, free-standing photonic-crystal cavities capable of enhancement of the MoS2 photoluminescence at the narrow cavity resonance. We demonstrate continuous tunability of the cavity resonance wavelength across the entire emission band of MoS2 simply by variation of the photonic crystal periodicity. Device fabrication started by substrate-scale growth of MoS2 using chemical vapor deposition (CVD) on non-birefringent thermal oxide on a silicon wafer; it was followed by lithographic fabrication of a photonic crystal nanocavity array on the same substrate at more than 50% yield of functional devices. Our cavities exhibit three dominant modes with measured linewidths less than 0.2 nm, corresponding to quality factors exceeding 4000. All experimental findings are found to be in excellent agreement with finite difference time domain (FDTD) simulations. CVD MoS2 provides scalable access to a direct band gap, inorganic, stable and efficient emitter material for on-chip photonics without the need for epitaxy and is at CMOS compatible processing parameters even for back-end-of-line integration; our findings suggest feasibility of cavity based line-narrowing in MoS2-based on-chip devices as it is required for instance for frequency-multiplexed operation in on-chip optical communication and sensing.
format	article
author	Sebastian Hammer H. Moritz Mangold Ariana E. Nguyen Dominic Martinez-Ta Sahar Naghibi Alvillar Ludwig Bartels Hubert J. Krenner
author_facet	Sebastian Hammer H. Moritz Mangold Ariana E. Nguyen Dominic Martinez-Ta Sahar Naghibi Alvillar Ludwig Bartels Hubert J. Krenner
author_sort	Sebastian Hammer
title	Scalable and Transfer-Free Fabrication of MoS2/SiO2 Hybrid Nanophotonic Cavity Arrays with Quality Factors Exceeding 4000
title_short	Scalable and Transfer-Free Fabrication of MoS2/SiO2 Hybrid Nanophotonic Cavity Arrays with Quality Factors Exceeding 4000
title_full	Scalable and Transfer-Free Fabrication of MoS2/SiO2 Hybrid Nanophotonic Cavity Arrays with Quality Factors Exceeding 4000
title_fullStr	Scalable and Transfer-Free Fabrication of MoS2/SiO2 Hybrid Nanophotonic Cavity Arrays with Quality Factors Exceeding 4000
title_full_unstemmed	Scalable and Transfer-Free Fabrication of MoS2/SiO2 Hybrid Nanophotonic Cavity Arrays with Quality Factors Exceeding 4000
title_sort	scalable and transfer-free fabrication of mos2/sio2 hybrid nanophotonic cavity arrays with quality factors exceeding 4000
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/a7d1ffb8a0da46a8a05e54420a7d3b2e
work_keys_str_mv	AT sebastianhammer scalableandtransferfreefabricationofmos2sio2hybridnanophotoniccavityarrayswithqualityfactorsexceeding4000 AT hmoritzmangold scalableandtransferfreefabricationofmos2sio2hybridnanophotoniccavityarrayswithqualityfactorsexceeding4000 AT arianaenguyen scalableandtransferfreefabricationofmos2sio2hybridnanophotoniccavityarrayswithqualityfactorsexceeding4000 AT dominicmartinezta scalableandtransferfreefabricationofmos2sio2hybridnanophotoniccavityarrayswithqualityfactorsexceeding4000 AT saharnaghibialvillar scalableandtransferfreefabricationofmos2sio2hybridnanophotoniccavityarrayswithqualityfactorsexceeding4000 AT ludwigbartels scalableandtransferfreefabricationofmos2sio2hybridnanophotoniccavityarrayswithqualityfactorsexceeding4000 AT hubertjkrenner scalableandtransferfreefabricationofmos2sio2hybridnanophotoniccavityarrayswithqualityfactorsexceeding4000
_version_	1718394112224264192

Scalable and Transfer-Free Fabrication of MoS2/SiO2 Hybrid Nanophotonic Cavity Arrays with Quality Factors Exceeding 4000

Ejemplares similares