Probing the magnetic profile of diluted magnetic semiconductors using polarized neutron reflectivity

Abstract Room temperature ferromagnetism has been observed in the Cu doped ZnO films deposited under an oxygen partial pressure of 10−3 and 10−5 torr on Pt (200 nm)/Ti (45 nm)/Si (001) substrates using pulsed laser deposition. Due to the deposition at relatively high temperature (873 K), Cu and Ti a...

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Autores principales:	X. Luo, L. T. Tseng, W. T. Lee, T. T. Tan, N. N. Bao, R. Liu, J. Ding, S. Li, V. Lauter, J. B. Yi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/a7e5dd4ee25644cda0d436e1db0f110b
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spelling	oai:doaj.org-article:a7e5dd4ee25644cda0d436e1db0f110b2021-12-02T12:32:37ZProbing the magnetic profile of diluted magnetic semiconductors using polarized neutron reflectivity10.1038/s41598-017-06793-w2045-2322https://doaj.org/article/a7e5dd4ee25644cda0d436e1db0f110b2017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-06793-whttps://doaj.org/toc/2045-2322Abstract Room temperature ferromagnetism has been observed in the Cu doped ZnO films deposited under an oxygen partial pressure of 10−3 and 10−5 torr on Pt (200 nm)/Ti (45 nm)/Si (001) substrates using pulsed laser deposition. Due to the deposition at relatively high temperature (873 K), Cu and Ti atoms diffuse to the surface and interface, which significantly affects the magnetic properties. Depth sensitive polarized neutron reflectometry method provides the details of the composition and magnetization profiles and shows that an accumulation of Cu on the surface leads to an increase in the magnetization near the surface. Our results reveal that the presence of the copper at Zn sites induces ferromagnetism at room temperature, confirming intrinsic ferromagnetism.X. LuoL. T. TsengW. T. LeeT. T. TanN. N. BaoR. LiuJ. DingS. LiV. LauterJ. B. YiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q X. Luo L. T. Tseng W. T. Lee T. T. Tan N. N. Bao R. Liu J. Ding S. Li V. Lauter J. B. Yi Probing the magnetic profile of diluted magnetic semiconductors using polarized neutron reflectivity
description	Abstract Room temperature ferromagnetism has been observed in the Cu doped ZnO films deposited under an oxygen partial pressure of 10−3 and 10−5 torr on Pt (200 nm)/Ti (45 nm)/Si (001) substrates using pulsed laser deposition. Due to the deposition at relatively high temperature (873 K), Cu and Ti atoms diffuse to the surface and interface, which significantly affects the magnetic properties. Depth sensitive polarized neutron reflectometry method provides the details of the composition and magnetization profiles and shows that an accumulation of Cu on the surface leads to an increase in the magnetization near the surface. Our results reveal that the presence of the copper at Zn sites induces ferromagnetism at room temperature, confirming intrinsic ferromagnetism.
format	article
author	X. Luo L. T. Tseng W. T. Lee T. T. Tan N. N. Bao R. Liu J. Ding S. Li V. Lauter J. B. Yi
author_facet	X. Luo L. T. Tseng W. T. Lee T. T. Tan N. N. Bao R. Liu J. Ding S. Li V. Lauter J. B. Yi
author_sort	X. Luo
title	Probing the magnetic profile of diluted magnetic semiconductors using polarized neutron reflectivity
title_short	Probing the magnetic profile of diluted magnetic semiconductors using polarized neutron reflectivity
title_full	Probing the magnetic profile of diluted magnetic semiconductors using polarized neutron reflectivity
title_fullStr	Probing the magnetic profile of diluted magnetic semiconductors using polarized neutron reflectivity
title_full_unstemmed	Probing the magnetic profile of diluted magnetic semiconductors using polarized neutron reflectivity
title_sort	probing the magnetic profile of diluted magnetic semiconductors using polarized neutron reflectivity
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/a7e5dd4ee25644cda0d436e1db0f110b
work_keys_str_mv	AT xluo probingthemagneticprofileofdilutedmagneticsemiconductorsusingpolarizedneutronreflectivity AT lttseng probingthemagneticprofileofdilutedmagneticsemiconductorsusingpolarizedneutronreflectivity AT wtlee probingthemagneticprofileofdilutedmagneticsemiconductorsusingpolarizedneutronreflectivity AT tttan probingthemagneticprofileofdilutedmagneticsemiconductorsusingpolarizedneutronreflectivity AT nnbao probingthemagneticprofileofdilutedmagneticsemiconductorsusingpolarizedneutronreflectivity AT rliu probingthemagneticprofileofdilutedmagneticsemiconductorsusingpolarizedneutronreflectivity AT jding probingthemagneticprofileofdilutedmagneticsemiconductorsusingpolarizedneutronreflectivity AT sli probingthemagneticprofileofdilutedmagneticsemiconductorsusingpolarizedneutronreflectivity AT vlauter probingthemagneticprofileofdilutedmagneticsemiconductorsusingpolarizedneutronreflectivity AT jbyi probingthemagneticprofileofdilutedmagneticsemiconductorsusingpolarizedneutronreflectivity
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Probing the magnetic profile of diluted magnetic semiconductors using polarized neutron reflectivity

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