Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires
Semiconductors are promising for high performance spintronics but the low functioning temperature hampers their applications. Here the authors achieve a strong room temperature modulation of spin-dependent resistance in GaN nanowires, which marks an important step towards practical spintronic device...
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| Autores principales: | , , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/a7f75cd3087e46968d1e7403a4d72c99 |
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| Sumario: | Semiconductors are promising for high performance spintronics but the low functioning temperature hampers their applications. Here the authors achieve a strong room temperature modulation of spin-dependent resistance in GaN nanowires, which marks an important step towards practical spintronic devices. |
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