Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

Semiconductors are promising for high performance spintronics but the low functioning temperature hampers their applications. Here the authors achieve a strong room temperature modulation of spin-dependent resistance in GaN nanowires, which marks an important step towards practical spintronic device...

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Autores principales:	Tae-Eon Park, Youn Ho Park, Jong-Min Lee, Sung Wook Kim, Hee Gyum Park, Byoung-Chul Min, Hyung-jun Kim, Hyun Cheol Koo, Heon-Jin Choi, Suk Hee Han, Mark Johnson, Joonyeon Chang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/a7f75cd3087e46968d1e7403a4d72c99
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spelling	oai:doaj.org-article:a7f75cd3087e46968d1e7403a4d72c992021-12-02T17:06:01ZLarge spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires10.1038/ncomms157222041-1723https://doaj.org/article/a7f75cd3087e46968d1e7403a4d72c992017-06-01T00:00:00Zhttps://doi.org/10.1038/ncomms15722https://doaj.org/toc/2041-1723Semiconductors are promising for high performance spintronics but the low functioning temperature hampers their applications. Here the authors achieve a strong room temperature modulation of spin-dependent resistance in GaN nanowires, which marks an important step towards practical spintronic devices.Tae-Eon ParkYoun Ho ParkJong-Min LeeSung Wook KimHee Gyum ParkByoung-Chul MinHyung-jun KimHyun Cheol KooHeon-Jin ChoiSuk Hee HanMark JohnsonJoonyeon ChangNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Tae-Eon Park Youn Ho Park Jong-Min Lee Sung Wook Kim Hee Gyum Park Byoung-Chul Min Hyung-jun Kim Hyun Cheol Koo Heon-Jin Choi Suk Hee Han Mark Johnson Joonyeon Chang Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires
description	Semiconductors are promising for high performance spintronics but the low functioning temperature hampers their applications. Here the authors achieve a strong room temperature modulation of spin-dependent resistance in GaN nanowires, which marks an important step towards practical spintronic devices.
format	article
author	Tae-Eon Park Youn Ho Park Jong-Min Lee Sung Wook Kim Hee Gyum Park Byoung-Chul Min Hyung-jun Kim Hyun Cheol Koo Heon-Jin Choi Suk Hee Han Mark Johnson Joonyeon Chang
author_facet	Tae-Eon Park Youn Ho Park Jong-Min Lee Sung Wook Kim Hee Gyum Park Byoung-Chul Min Hyung-jun Kim Hyun Cheol Koo Heon-Jin Choi Suk Hee Han Mark Johnson Joonyeon Chang
author_sort	Tae-Eon Park
title	Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires
title_short	Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires
title_full	Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires
title_fullStr	Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires
title_full_unstemmed	Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires
title_sort	large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/a7f75cd3087e46968d1e7403a4d72c99
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Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

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