Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra
We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains. The device characteristics are thoroughly analyzed by the strain distribution, band structure, and absorption characteristics. Numerical and...
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Institue of Optics and Electronics, Chinese Academy of Sciences
2018
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oai:doaj.org-article:a8b9e749e7a84a47bebe4c9efa211dc62021-11-11T10:07:53ZGermanium-tin alloys: applications for optoelectronics in mid-infrared spectra2096-457910.29026/oea.2018.180004https://doaj.org/article/a8b9e749e7a84a47bebe4c9efa211dc62018-03-01T00:00:00Zhttp://www.oejournal.org/article/doi/10.29026/oea.2018.180004https://doaj.org/toc/2096-4579We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains. The device characteristics are thoroughly analyzed by the strain distribution, band structure, and absorption characteristics. Numerical and analytical methods show that with optimal structural parameters, the device performance can be further improved and the wavelength application range can be extended to 2~5 μm in the mid-infrared spectra. It is demonstrated that this proposed strategy provides an effective technique for the strained-GeSn devices in future optical designs, which will be competitive for the optoelectronics applications in mid-infrared wavelength.Fang CizheLiu YanZhang QingfangHan GenquanGao XiYao ShaoZhang JinchengHao YueInstitue of Optics and Electronics, Chinese Academy of Sciencesarticleoptoelectronicsgermanium-tin alloysmid-infrared spectraOptics. LightQC350-467ENOpto-Electronic Advances, Vol 1, Iss 3, Pp 180004-1-180004-10 (2018) |
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optoelectronics germanium-tin alloys mid-infrared spectra Optics. Light QC350-467 |
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optoelectronics germanium-tin alloys mid-infrared spectra Optics. Light QC350-467 Fang Cizhe Liu Yan Zhang Qingfang Han Genquan Gao Xi Yao Shao Zhang Jincheng Hao Yue Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra |
| description |
We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains. The device characteristics are thoroughly analyzed by the strain distribution, band structure, and absorption characteristics. Numerical and analytical methods show that with optimal structural parameters, the device performance can be further improved and the wavelength application range can be extended to 2~5 μm in the mid-infrared spectra. It is demonstrated that this proposed strategy provides an effective technique for the strained-GeSn devices in future optical designs, which will be competitive for the optoelectronics applications in mid-infrared wavelength. |
| format |
article |
| author |
Fang Cizhe Liu Yan Zhang Qingfang Han Genquan Gao Xi Yao Shao Zhang Jincheng Hao Yue |
| author_facet |
Fang Cizhe Liu Yan Zhang Qingfang Han Genquan Gao Xi Yao Shao Zhang Jincheng Hao Yue |
| author_sort |
Fang Cizhe |
| title |
Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra |
| title_short |
Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra |
| title_full |
Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra |
| title_fullStr |
Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra |
| title_full_unstemmed |
Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra |
| title_sort |
germanium-tin alloys: applications for optoelectronics in mid-infrared spectra |
| publisher |
Institue of Optics and Electronics, Chinese Academy of Sciences |
| publishDate |
2018 |
| url |
https://doaj.org/article/a8b9e749e7a84a47bebe4c9efa211dc6 |
| work_keys_str_mv |
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| _version_ |
1718439245210714112 |