Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra

We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains. The device characteristics are thoroughly analyzed by the strain distribution, band structure, and absorption characteristics. Numerical and...

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Autores principales:	Fang Cizhe, Liu Yan, Zhang Qingfang, Han Genquan, Gao Xi, Yao Shao, Zhang Jincheng, Hao Yue
Formato:	article
Lenguaje:	EN
Publicado:	Institue of Optics and Electronics, Chinese Academy of Sciences 2018
Materias:	optoelectronics germanium-tin alloys mid-infrared spectra Optics. Light QC350-467
Acceso en línea:	https://doaj.org/article/a8b9e749e7a84a47bebe4c9efa211dc6
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spelling	oai:doaj.org-article:a8b9e749e7a84a47bebe4c9efa211dc62021-11-11T10:07:53ZGermanium-tin alloys: applications for optoelectronics in mid-infrared spectra2096-457910.29026/oea.2018.180004https://doaj.org/article/a8b9e749e7a84a47bebe4c9efa211dc62018-03-01T00:00:00Zhttp://www.oejournal.org/article/doi/10.29026/oea.2018.180004https://doaj.org/toc/2096-4579We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains. The device characteristics are thoroughly analyzed by the strain distribution, band structure, and absorption characteristics. Numerical and analytical methods show that with optimal structural parameters, the device performance can be further improved and the wavelength application range can be extended to 2~5 μm in the mid-infrared spectra. It is demonstrated that this proposed strategy provides an effective technique for the strained-GeSn devices in future optical designs, which will be competitive for the optoelectronics applications in mid-infrared wavelength.Fang CizheLiu YanZhang QingfangHan GenquanGao XiYao ShaoZhang JinchengHao YueInstitue of Optics and Electronics, Chinese Academy of Sciencesarticleoptoelectronicsgermanium-tin alloysmid-infrared spectraOptics. LightQC350-467ENOpto-Electronic Advances, Vol 1, Iss 3, Pp 180004-1-180004-10 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	optoelectronics germanium-tin alloys mid-infrared spectra Optics. Light QC350-467
spellingShingle	optoelectronics germanium-tin alloys mid-infrared spectra Optics. Light QC350-467 Fang Cizhe Liu Yan Zhang Qingfang Han Genquan Gao Xi Yao Shao Zhang Jincheng Hao Yue Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra
description	We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains. The device characteristics are thoroughly analyzed by the strain distribution, band structure, and absorption characteristics. Numerical and analytical methods show that with optimal structural parameters, the device performance can be further improved and the wavelength application range can be extended to 2~5 μm in the mid-infrared spectra. It is demonstrated that this proposed strategy provides an effective technique for the strained-GeSn devices in future optical designs, which will be competitive for the optoelectronics applications in mid-infrared wavelength.
format	article
author	Fang Cizhe Liu Yan Zhang Qingfang Han Genquan Gao Xi Yao Shao Zhang Jincheng Hao Yue
author_facet	Fang Cizhe Liu Yan Zhang Qingfang Han Genquan Gao Xi Yao Shao Zhang Jincheng Hao Yue
author_sort	Fang Cizhe
title	Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra
title_short	Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra
title_full	Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra
title_fullStr	Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra
title_full_unstemmed	Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra
title_sort	germanium-tin alloys: applications for optoelectronics in mid-infrared spectra
publisher	Institue of Optics and Electronics, Chinese Academy of Sciences
publishDate	2018
url	https://doaj.org/article/a8b9e749e7a84a47bebe4c9efa211dc6
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_version_	1718439245210714112

Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra

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