Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra
We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains. The device characteristics are thoroughly analyzed by the strain distribution, band structure, and absorption characteristics. Numerical and...
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| Main Authors: | , , , , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
Institue of Optics and Electronics, Chinese Academy of Sciences
2018
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| Subjects: | |
| Online Access: | https://doaj.org/article/a8b9e749e7a84a47bebe4c9efa211dc6 |
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