Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

Abstract Power devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. How...

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Autores principales:	Yuki Tsuruma, Emi Kawashima, Yoshikazu Nagasaki, Takashi Sekiya, Gaku Imamura, Genki Yoshikawa
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/a8f182da53ed4910aae02a6a8505af98
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spelling	oai:doaj.org-article:a8f182da53ed4910aae02a6a8505af982021-12-02T14:29:09ZAmorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit10.1038/s41598-021-88222-72045-2322https://doaj.org/article/a8f182da53ed4910aae02a6a8505af982021-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-88222-7https://doaj.org/toc/2045-2322Abstract Power devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance R on,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage V BD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.Yuki TsurumaEmi KawashimaYoshikazu NagasakiTakashi SekiyaGaku ImamuraGenki YoshikawaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Yuki Tsuruma Emi Kawashima Yoshikazu Nagasaki Takashi Sekiya Gaku Imamura Genki Yoshikawa Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit
description	Abstract Power devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance R on,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage V BD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.
format	article
author	Yuki Tsuruma Emi Kawashima Yoshikazu Nagasaki Takashi Sekiya Gaku Imamura Genki Yoshikawa
author_facet	Yuki Tsuruma Emi Kawashima Yoshikazu Nagasaki Takashi Sekiya Gaku Imamura Genki Yoshikawa
author_sort	Yuki Tsuruma
title	Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit
title_short	Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit
title_full	Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit
title_fullStr	Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit
title_full_unstemmed	Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit
title_sort	amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/a8f182da53ed4910aae02a6a8505af98
work_keys_str_mv	AT yukitsuruma amorphousthinfilmoxidepowerdevicesoperatingbeyondbulksinglecrystalsiliconlimit AT emikawashima amorphousthinfilmoxidepowerdevicesoperatingbeyondbulksinglecrystalsiliconlimit AT yoshikazunagasaki amorphousthinfilmoxidepowerdevicesoperatingbeyondbulksinglecrystalsiliconlimit AT takashisekiya amorphousthinfilmoxidepowerdevicesoperatingbeyondbulksinglecrystalsiliconlimit AT gakuimamura amorphousthinfilmoxidepowerdevicesoperatingbeyondbulksinglecrystalsiliconlimit AT genkiyoshikawa amorphousthinfilmoxidepowerdevicesoperatingbeyondbulksinglecrystalsiliconlimit
_version_	1718391271945404416

Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

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