Fabrication of a UV Photodetector Based on <i>n</i>-TiO<sub>2</sub>/<i>p</i>-CuMnO<sub>2</sub> Heterostructures
The heterojunction based on <i>n</i>-TiO<sub>2</sub> nanolayer/<i>p</i>-CuMnO<sub>2</sub> thin film was achieved using an efficient two-step synthesis process for the fabrication of a UV photodetector. The first step consisted of obtaining the TiO<s...
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Autores principales: | , , , , , |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
MDPI AG
2021
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Materias: | |
Acceso en línea: | https://doaj.org/article/a916411c43994f7fbb12c5b786fbad58 |
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Sumario: | The heterojunction based on <i>n</i>-TiO<sub>2</sub> nanolayer/<i>p</i>-CuMnO<sub>2</sub> thin film was achieved using an efficient two-step synthesis process for the fabrication of a UV photodetector. The first step consisted of obtaining the TiO<sub>2</sub> nanolayer, which was grown on titan foil by thermal oxidation (Ti-TiO<sub>2</sub>). The second step consisted of CuMnO<sub>2</sub> thin film deposition onto the surface of Ti-TiO<sub>2</sub> using the Doctor Blade method. Techniques such as X-ray diffraction, UV-VIS analysis, SEM, and AFM morphologies were used for the investigation of the structural and morphological characteristics of the as-synthesized heterostructures. The Mott–Schottky analysis was performed in order to prove the <i>n</i>-TiO<sub>2</sub><i>/p</i>-CuMnO<sub>2</sub> junction. The <i>I</i>-<i>V</i> measurements of the <i>n</i>-TiO<sub>2</sub> nanolayer/<i>p</i>-CuMnO<sub>2</sub> thin film heterostructure confirm its diode characteristics under dark state, UV and visible illumination conditions. The obtained heterojunction, which is based on two types of semiconductors with different energy band structures, improves the separating results of charges, which is very important for high-performance UV photodetectors. |
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