Change Of Nano Material Electrical Characteristics For Medical System Applications
Peiqin Chen,1,2 Xingye Zhang,2 Kemin Jiang,2 Qiang Zhang,2 Shaocheng Qi,2 Weidong Man,1 Thomas J Webster,3 Mingzhi Dai2 1Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Wuhan Institute of Technology, Wuhan, People’s Republic of China; 2Ningbo Institute of Material Technolo...
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| Formato: | article |
| Lenguaje: | EN |
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Dove Medical Press
2019
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| Acceso en línea: | https://doaj.org/article/a982c6c05e284b1d8accf6701a64e197 |
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| Sumario: | Peiqin Chen,1,2 Xingye Zhang,2 Kemin Jiang,2 Qiang Zhang,2 Shaocheng Qi,2 Weidong Man,1 Thomas J Webster,3 Mingzhi Dai2 1Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Wuhan Institute of Technology, Wuhan, People’s Republic of China; 2Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, People’s Republic of China; 3Department of Chemical Engineering, Northeastern University, Boston, MA, USACorrespondence: Thomas J WebsterDepartment of Chemical Engineering, Northeastern University, Boston, MA 02115, USATel +1-617-373-6585Email th.webster@neu.eduMingzhi DaiNingbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of ChinaTel +86 151 5831 3993Email daimz@nimte.ac.cnAbstract: Amorphous nano oxides (AO) are intriguing advanced materials for a wide variety of nanosystem medical applications including serving as biosensors devices with p-n junctions, nanomaterial-enabled wearable sensors, artificial synaptic devices for AI neurocomputers and medical mimicking research. However, p-type AO with reliable electrical properties are very difficult to obtain according to the literature. Based on the oxide thin film transistor, a phenomenon that could change an n-type material into a p-type semiconductor is proposed and explained here. The typical In-Ga-Zn-O material has been reported to be an n-type semiconductor, which can be changed by physical conditions, such as in processing or bias. In this way, here, we have identified a manner to change nano material electrical properties among n-type and p-type semiconductors very easily for medical application like biosensors in artificial skin.Keywords: electrical properties, ntype semiconductor, ptype semiconductor, currentvoltage, IV, capacitancevoltage, CV, sensors |
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