Change Of Nano Material Electrical Characteristics For Medical System Applications

Peiqin Chen,1,2 Xingye Zhang,2 Kemin Jiang,2 Qiang Zhang,2 Shaocheng Qi,2 Weidong Man,1 Thomas J Webster,3 Mingzhi Dai2 1Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Wuhan Institute of Technology, Wuhan, People’s Republic of China; 2Ningbo Institute of Material Technolo...

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Autores principales:	Chen P, Zhang X, Jiang K, Zhang Q, Qi S, Man W, Webster TJ, Dai M
Formato:	article
Lenguaje:	EN
Publicado:	Dove Medical Press 2019
Materias:	electrical properties n-type semiconductor p-type xps current-voltage (i-v) capacitance-voltage (c-v) sensors Medicine (General) R5-920
Acceso en línea:	https://doaj.org/article/a982c6c05e284b1d8accf6701a64e197
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spelling	oai:doaj.org-article:a982c6c05e284b1d8accf6701a64e1972021-12-02T09:43:50ZChange Of Nano Material Electrical Characteristics For Medical System Applications1178-2013https://doaj.org/article/a982c6c05e284b1d8accf6701a64e1972019-12-01T00:00:00Zhttps://www.dovepress.com/change-of-nano-material-electrical-characteristics-for-medical-system--peer-reviewed-article-IJNhttps://doaj.org/toc/1178-2013Peiqin Chen,1,2 Xingye Zhang,2 Kemin Jiang,2 Qiang Zhang,2 Shaocheng Qi,2 Weidong Man,1 Thomas J Webster,3 Mingzhi Dai2 1Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Wuhan Institute of Technology, Wuhan, People’s Republic of China; 2Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, People’s Republic of China; 3Department of Chemical Engineering, Northeastern University, Boston, MA, USACorrespondence: Thomas J WebsterDepartment of Chemical Engineering, Northeastern University, Boston, MA 02115, USATel +1-617-373-6585Email th.webster@neu.eduMingzhi DaiNingbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of ChinaTel +86 151 5831 3993Email daimz@nimte.ac.cnAbstract: Amorphous nano oxides (AO) are intriguing advanced materials for a wide variety of nanosystem medical applications including serving as biosensors devices with p-n junctions, nanomaterial-enabled wearable sensors, artificial synaptic devices for AI neurocomputers and medical mimicking research. However, p-type AO with reliable electrical properties are very difficult to obtain according to the literature. Based on the oxide thin film transistor, a phenomenon that could change an n-type material into a p-type semiconductor is proposed and explained here. The typical In-Ga-Zn-O material has been reported to be an n-type semiconductor, which can be changed by physical conditions, such as in processing or bias. In this way, here, we have identified a manner to change nano material electrical properties among n-type and p-type semiconductors very easily for medical application like biosensors in artificial skin.Keywords: electrical properties, ntype semiconductor, ptype semiconductor, currentvoltage, IV, capacitancevoltage, CV, sensorsChen PZhang XJiang KZhang QQi SMan WWebster TJDai MDove Medical Pressarticleelectrical propertiesn-type semiconductorp-typexpscurrent-voltage (i-v)capacitance-voltage (c-v)sensorsMedicine (General)R5-920ENInternational Journal of Nanomedicine, Vol Volume 14, Pp 10119-10122 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	electrical properties n-type semiconductor p-type xps current-voltage (i-v) capacitance-voltage (c-v) sensors Medicine (General) R5-920
spellingShingle	electrical properties n-type semiconductor p-type xps current-voltage (i-v) capacitance-voltage (c-v) sensors Medicine (General) R5-920 Chen P Zhang X Jiang K Zhang Q Qi S Man W Webster TJ Dai M Change Of Nano Material Electrical Characteristics For Medical System Applications
description	Peiqin Chen,1,2 Xingye Zhang,2 Kemin Jiang,2 Qiang Zhang,2 Shaocheng Qi,2 Weidong Man,1 Thomas J Webster,3 Mingzhi Dai2 1Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Wuhan Institute of Technology, Wuhan, People’s Republic of China; 2Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, People’s Republic of China; 3Department of Chemical Engineering, Northeastern University, Boston, MA, USACorrespondence: Thomas J WebsterDepartment of Chemical Engineering, Northeastern University, Boston, MA 02115, USATel +1-617-373-6585Email th.webster@neu.eduMingzhi DaiNingbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of ChinaTel +86 151 5831 3993Email daimz@nimte.ac.cnAbstract: Amorphous nano oxides (AO) are intriguing advanced materials for a wide variety of nanosystem medical applications including serving as biosensors devices with p-n junctions, nanomaterial-enabled wearable sensors, artificial synaptic devices for AI neurocomputers and medical mimicking research. However, p-type AO with reliable electrical properties are very difficult to obtain according to the literature. Based on the oxide thin film transistor, a phenomenon that could change an n-type material into a p-type semiconductor is proposed and explained here. The typical In-Ga-Zn-O material has been reported to be an n-type semiconductor, which can be changed by physical conditions, such as in processing or bias. In this way, here, we have identified a manner to change nano material electrical properties among n-type and p-type semiconductors very easily for medical application like biosensors in artificial skin.Keywords: electrical properties, ntype semiconductor, ptype semiconductor, currentvoltage, IV, capacitancevoltage, CV, sensors
format	article
author	Chen P Zhang X Jiang K Zhang Q Qi S Man W Webster TJ Dai M
author_facet	Chen P Zhang X Jiang K Zhang Q Qi S Man W Webster TJ Dai M
author_sort	Chen P
title	Change Of Nano Material Electrical Characteristics For Medical System Applications
title_short	Change Of Nano Material Electrical Characteristics For Medical System Applications
title_full	Change Of Nano Material Electrical Characteristics For Medical System Applications
title_fullStr	Change Of Nano Material Electrical Characteristics For Medical System Applications
title_full_unstemmed	Change Of Nano Material Electrical Characteristics For Medical System Applications
title_sort	change of nano material electrical characteristics for medical system applications
publisher	Dove Medical Press
publishDate	2019
url	https://doaj.org/article/a982c6c05e284b1d8accf6701a64e197
work_keys_str_mv	AT chenp changeofnanomaterialelectricalcharacteristicsformedicalsystemapplications AT zhangx changeofnanomaterialelectricalcharacteristicsformedicalsystemapplications AT jiangk changeofnanomaterialelectricalcharacteristicsformedicalsystemapplications AT zhangq changeofnanomaterialelectricalcharacteristicsformedicalsystemapplications AT qis changeofnanomaterialelectricalcharacteristicsformedicalsystemapplications AT manw changeofnanomaterialelectricalcharacteristicsformedicalsystemapplications AT webstertj changeofnanomaterialelectricalcharacteristicsformedicalsystemapplications AT daim changeofnanomaterialelectricalcharacteristicsformedicalsystemapplications
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Change Of Nano Material Electrical Characteristics For Medical System Applications

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