A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model
Recently, carbon nanotube field-effect transistors (CNTFETs) have attracted wide attention as promising candidates for components in the next generation of electronic devices. In particular CNTFET-based RF devices and circuits show superior performance to those built with silicon FETs since they are...
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MDPI AG
2021
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oai:doaj.org-article:a99b9457a3f840b9a38b94bbfb1b2bdf2021-11-25T17:25:08ZA High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model10.3390/electronics102228352079-9292https://doaj.org/article/a99b9457a3f840b9a38b94bbfb1b2bdf2021-11-01T00:00:00Zhttps://www.mdpi.com/2079-9292/10/22/2835https://doaj.org/toc/2079-9292Recently, carbon nanotube field-effect transistors (CNTFETs) have attracted wide attention as promising candidates for components in the next generation of electronic devices. In particular CNTFET-based RF devices and circuits show superior performance to those built with silicon FETs since they are able to obtain higher power-gain and cut-off frequency at lower power dissipation. The aim of this paper is to present a compact, design-oriented model of CNTFETs that is able to ease the development of a complete amplifier. As a case study, the detailed design of a high-gain CNTFET-based broadband inductorless LNA is presented.Paolo CrippaGiorgio BiagettiClaudio TurchettiLaura FalaschettiDavide MencarelliGeorge DeligeorgisLuca PierantoniMDPI AGarticlecarbon nanotubeCNTFETlow-noise amplifierLNAcompact modelElectronicsTK7800-8360ENElectronics, Vol 10, Iss 2835, p 2835 (2021) |
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carbon nanotube CNTFET low-noise amplifier LNA compact model Electronics TK7800-8360 |
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carbon nanotube CNTFET low-noise amplifier LNA compact model Electronics TK7800-8360 Paolo Crippa Giorgio Biagetti Claudio Turchetti Laura Falaschetti Davide Mencarelli George Deligeorgis Luca Pierantoni A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model |
description |
Recently, carbon nanotube field-effect transistors (CNTFETs) have attracted wide attention as promising candidates for components in the next generation of electronic devices. In particular CNTFET-based RF devices and circuits show superior performance to those built with silicon FETs since they are able to obtain higher power-gain and cut-off frequency at lower power dissipation. The aim of this paper is to present a compact, design-oriented model of CNTFETs that is able to ease the development of a complete amplifier. As a case study, the detailed design of a high-gain CNTFET-based broadband inductorless LNA is presented. |
format |
article |
author |
Paolo Crippa Giorgio Biagetti Claudio Turchetti Laura Falaschetti Davide Mencarelli George Deligeorgis Luca Pierantoni |
author_facet |
Paolo Crippa Giorgio Biagetti Claudio Turchetti Laura Falaschetti Davide Mencarelli George Deligeorgis Luca Pierantoni |
author_sort |
Paolo Crippa |
title |
A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model |
title_short |
A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model |
title_full |
A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model |
title_fullStr |
A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model |
title_full_unstemmed |
A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model |
title_sort |
high-gain cntfet-based lna developed using a compact design-oriented device model |
publisher |
MDPI AG |
publishDate |
2021 |
url |
https://doaj.org/article/a99b9457a3f840b9a38b94bbfb1b2bdf |
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