A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model
Recently, carbon nanotube field-effect transistors (CNTFETs) have attracted wide attention as promising candidates for components in the next generation of electronic devices. In particular CNTFET-based RF devices and circuits show superior performance to those built with silicon FETs since they are...
Guardado en:
| Autores principales: | , , , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/a99b9457a3f840b9a38b94bbfb1b2bdf |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|