A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model
Recently, carbon nanotube field-effect transistors (CNTFETs) have attracted wide attention as promising candidates for components in the next generation of electronic devices. In particular CNTFET-based RF devices and circuits show superior performance to those built with silicon FETs since they are...
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Autores principales: | , , , , , , |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
MDPI AG
2021
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Materias: | |
Acceso en línea: | https://doaj.org/article/a99b9457a3f840b9a38b94bbfb1b2bdf |
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