Fabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate

Abstract The application of magnetic oxides in spintronics has recently attracted much attention. The epitaxial growth of magnetic oxide on Si could be the first step of new functional spintronics devices with semiconductors. However, epitaxial spinel ferrite films are generally grown on oxide subst...

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Autores principales:	Nozomi Takahashi, Teodor Huminiuc, Yuta Yamamoto, Takashi Yanase, Toshihiro Shimada, Atsufumi Hirohata, Taro Nagahama
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/a9c7909846944b32803ea89da44937da
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spelling	oai:doaj.org-article:a9c7909846944b32803ea89da44937da2021-12-02T15:06:25ZFabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate10.1038/s41598-017-07104-z2045-2322https://doaj.org/article/a9c7909846944b32803ea89da44937da2017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-07104-zhttps://doaj.org/toc/2045-2322Abstract The application of magnetic oxides in spintronics has recently attracted much attention. The epitaxial growth of magnetic oxide on Si could be the first step of new functional spintronics devices with semiconductors. However, epitaxial spinel ferrite films are generally grown on oxide substrates, not on semiconductors. To combine oxide spintronics and semiconductor technology, we fabricated Fe3O4 films through epitaxial growth on a Si(111) substrate by inserting a γ-Al2O3 buffer layer. Both of γ-Al2O3 and Fe3O4 layer grew epitaxially on Si and the films exhibited the magnetic and electronic properties as same as bulk. Furthermore, we also found the buffer layer dependence of crystal structure of Fe3O4 by X-ray diffraction and high-resolution transmission electron microscope. The Fe3O4 films on an amorphous-Al2O3 buffer layer grown at room temperature grew uniaxially in the (111) orientation and had a textured structure in the plane. When Fe3O4 was deposited on Si(111) directly, the poly-crystal Fe3O4 films were obtained due to SiOx on Si substrate. The epitaxial Fe3O4 layer on Si substrates enable us the integration of highly functional spintoronic devices with Si technology.Nozomi TakahashiTeodor HuminiucYuta YamamotoTakashi YanaseToshihiro ShimadaAtsufumi HirohataTaro NagahamaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Nozomi Takahashi Teodor Huminiuc Yuta Yamamoto Takashi Yanase Toshihiro Shimada Atsufumi Hirohata Taro Nagahama Fabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate
description	Abstract The application of magnetic oxides in spintronics has recently attracted much attention. The epitaxial growth of magnetic oxide on Si could be the first step of new functional spintronics devices with semiconductors. However, epitaxial spinel ferrite films are generally grown on oxide substrates, not on semiconductors. To combine oxide spintronics and semiconductor technology, we fabricated Fe3O4 films through epitaxial growth on a Si(111) substrate by inserting a γ-Al2O3 buffer layer. Both of γ-Al2O3 and Fe3O4 layer grew epitaxially on Si and the films exhibited the magnetic and electronic properties as same as bulk. Furthermore, we also found the buffer layer dependence of crystal structure of Fe3O4 by X-ray diffraction and high-resolution transmission electron microscope. The Fe3O4 films on an amorphous-Al2O3 buffer layer grown at room temperature grew uniaxially in the (111) orientation and had a textured structure in the plane. When Fe3O4 was deposited on Si(111) directly, the poly-crystal Fe3O4 films were obtained due to SiOx on Si substrate. The epitaxial Fe3O4 layer on Si substrates enable us the integration of highly functional spintoronic devices with Si technology.
format	article
author	Nozomi Takahashi Teodor Huminiuc Yuta Yamamoto Takashi Yanase Toshihiro Shimada Atsufumi Hirohata Taro Nagahama
author_facet	Nozomi Takahashi Teodor Huminiuc Yuta Yamamoto Takashi Yanase Toshihiro Shimada Atsufumi Hirohata Taro Nagahama
author_sort	Nozomi Takahashi
title	Fabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate
title_short	Fabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate
title_full	Fabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate
title_fullStr	Fabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate
title_full_unstemmed	Fabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate
title_sort	fabrication of epitaxial fe3o4 film on a si(111) substrate
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/a9c7909846944b32803ea89da44937da
work_keys_str_mv	AT nozomitakahashi fabricationofepitaxialfe3o4filmonasi111substrate AT teodorhuminiuc fabricationofepitaxialfe3o4filmonasi111substrate AT yutayamamoto fabricationofepitaxialfe3o4filmonasi111substrate AT takashiyanase fabricationofepitaxialfe3o4filmonasi111substrate AT toshihiroshimada fabricationofepitaxialfe3o4filmonasi111substrate AT atsufumihirohata fabricationofepitaxialfe3o4filmonasi111substrate AT taronagahama fabricationofepitaxialfe3o4filmonasi111substrate
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Fabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate

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