Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates.

Silicene has attracted remarkable attention in the semiconductor research community due to its silicon (Si) nature. It is predicted as one of the most promising candidates for the next generation nanoelectronic devices. In this paper, an efficient non-iterative technique is employed to create the SP...

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Autores principales:	Mu Wen Chuan, Kien Liong Wong, Munawar Agus Riyadi, Afiq Hamzah, Shahrizal Rusli, Nurul Ezaila Alias, Cheng Siong Lim, Michael Loong Peng Tan
Formato:	article
Lenguaje:	EN
Publicado:	Public Library of Science (PLoS) 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/a9ec69f1bae546dc94e22b3c647a1216
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spelling	oai:doaj.org-article:a9ec69f1bae546dc94e22b3c647a12162021-12-02T20:10:41ZSemi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates.1932-620310.1371/journal.pone.0253289https://doaj.org/article/a9ec69f1bae546dc94e22b3c647a12162021-01-01T00:00:00Zhttps://doi.org/10.1371/journal.pone.0253289https://doaj.org/toc/1932-6203Silicene has attracted remarkable attention in the semiconductor research community due to its silicon (Si) nature. It is predicted as one of the most promising candidates for the next generation nanoelectronic devices. In this paper, an efficient non-iterative technique is employed to create the SPICE models for p-type and n-type uniformly doped silicene field-effect transistors (FETs). The current-voltage characteristics show that the proposed silicene FET models exhibit high on-to-off current ratio under ballistic transport. In order to obtain practical digital logic timing diagrams, a parasitic load capacitance, which is dependent on the interconnect length, is attached at the output terminal of the logic circuits. Furthermore, the key circuit performance metrics, including the propagation delay, average power, power-delay product and energy-delay product of the proposed silicene-based logic gates are extracted and benchmarked with published results. The effects of the interconnect length to the propagation delay and average power are also investigated. The results of this work further envisage the uniformly doped silicene as a promising candidate for future nanoelectronic applications.Mu Wen ChuanKien Liong WongMunawar Agus RiyadiAfiq HamzahShahrizal RusliNurul Ezaila AliasCheng Siong LimMichael Loong Peng TanPublic Library of Science (PLoS)articleMedicineRScienceQENPLoS ONE, Vol 16, Iss 6, p e0253289 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Mu Wen Chuan Kien Liong Wong Munawar Agus Riyadi Afiq Hamzah Shahrizal Rusli Nurul Ezaila Alias Cheng Siong Lim Michael Loong Peng Tan Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates.
description	Silicene has attracted remarkable attention in the semiconductor research community due to its silicon (Si) nature. It is predicted as one of the most promising candidates for the next generation nanoelectronic devices. In this paper, an efficient non-iterative technique is employed to create the SPICE models for p-type and n-type uniformly doped silicene field-effect transistors (FETs). The current-voltage characteristics show that the proposed silicene FET models exhibit high on-to-off current ratio under ballistic transport. In order to obtain practical digital logic timing diagrams, a parasitic load capacitance, which is dependent on the interconnect length, is attached at the output terminal of the logic circuits. Furthermore, the key circuit performance metrics, including the propagation delay, average power, power-delay product and energy-delay product of the proposed silicene-based logic gates are extracted and benchmarked with published results. The effects of the interconnect length to the propagation delay and average power are also investigated. The results of this work further envisage the uniformly doped silicene as a promising candidate for future nanoelectronic applications.
format	article
author	Mu Wen Chuan Kien Liong Wong Munawar Agus Riyadi Afiq Hamzah Shahrizal Rusli Nurul Ezaila Alias Cheng Siong Lim Michael Loong Peng Tan
author_facet	Mu Wen Chuan Kien Liong Wong Munawar Agus Riyadi Afiq Hamzah Shahrizal Rusli Nurul Ezaila Alias Cheng Siong Lim Michael Loong Peng Tan
author_sort	Mu Wen Chuan
title	Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates.
title_short	Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates.
title_full	Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates.
title_fullStr	Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates.
title_full_unstemmed	Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates.
title_sort	semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates.
publisher	Public Library of Science (PLoS)
publishDate	2021
url	https://doaj.org/article/a9ec69f1bae546dc94e22b3c647a1216
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Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates.

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