Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different In Gradients

The electroluminescence (EL) properties of InGaN/AlGaN ultraviolet light-emitting multiple quantum wells (MQWs) with identical average In content but different In gradients (In content increases linearly, along the growth direction) are investigated numerically. It is found that the luminescence eff...

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Autores principales:	Jie Zhang, Wei Liu, Shuyuan Zhang
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	InGaN/AlGaN multiple quantum wells In gradient carrier distribution wavefunction Crystallography QD901-999
Acceso en línea:	https://doaj.org/article/aad3369a37c74b40a07d0ffb7f045fb6
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spelling	oai:doaj.org-article:aad3369a37c74b40a07d0ffb7f045fb62021-11-25T17:19:16ZUnderstanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different In Gradients10.3390/cryst111113902073-4352https://doaj.org/article/aad3369a37c74b40a07d0ffb7f045fb62021-11-01T00:00:00Zhttps://www.mdpi.com/2073-4352/11/11/1390https://doaj.org/toc/2073-4352The electroluminescence (EL) properties of InGaN/AlGaN ultraviolet light-emitting multiple quantum wells (MQWs) with identical average In content but different In gradients (In content increases linearly, along the growth direction) are investigated numerically. It is found that the luminescence efficiency is improved, and the EL spectral peak wavelength becomes longer for the MQW sample with a larger In gradient. Since the influence of In gradient is different for the conduction and valence bands in InGaN layers, the distribution of electrons and holes in QWs may be changed, leading to a redshift of EL spectra. In particular, when the In gradient increases, the overlap integral of electron-hole wavefunction in InGaN QWs increases, resulting in a higher radiative recombination rate and an enhanced EL intensity.Jie ZhangWei LiuShuyuan ZhangMDPI AGarticleInGaN/AlGaN multiple quantum wellsIn gradientcarrier distributionwavefunctionCrystallographyQD901-999ENCrystals, Vol 11, Iss 1390, p 1390 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	InGaN/AlGaN multiple quantum wells In gradient carrier distribution wavefunction Crystallography QD901-999
spellingShingle	InGaN/AlGaN multiple quantum wells In gradient carrier distribution wavefunction Crystallography QD901-999 Jie Zhang Wei Liu Shuyuan Zhang Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different In Gradients
description	The electroluminescence (EL) properties of InGaN/AlGaN ultraviolet light-emitting multiple quantum wells (MQWs) with identical average In content but different In gradients (In content increases linearly, along the growth direction) are investigated numerically. It is found that the luminescence efficiency is improved, and the EL spectral peak wavelength becomes longer for the MQW sample with a larger In gradient. Since the influence of In gradient is different for the conduction and valence bands in InGaN layers, the distribution of electrons and holes in QWs may be changed, leading to a redshift of EL spectra. In particular, when the In gradient increases, the overlap integral of electron-hole wavefunction in InGaN QWs increases, resulting in a higher radiative recombination rate and an enhanced EL intensity.
format	article
author	Jie Zhang Wei Liu Shuyuan Zhang
author_facet	Jie Zhang Wei Liu Shuyuan Zhang
author_sort	Jie Zhang
title	Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different In Gradients
title_short	Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different In Gradients
title_full	Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different In Gradients
title_fullStr	Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different In Gradients
title_full_unstemmed	Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different In Gradients
title_sort	understanding the luminescence characteristics of ultraviolet ingan/algan multiple quantum wells with different in gradients
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/aad3369a37c74b40a07d0ffb7f045fb6
work_keys_str_mv	AT jiezhang understandingtheluminescencecharacteristicsofultravioletinganalganmultiplequantumwellswithdifferentingradients AT weiliu understandingtheluminescencecharacteristicsofultravioletinganalganmultiplequantumwellswithdifferentingradients AT shuyuanzhang understandingtheluminescencecharacteristicsofultravioletinganalganmultiplequantumwellswithdifferentingradients
_version_	1718412550986530816

Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different In Gradients

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