Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different In Gradients
The electroluminescence (EL) properties of InGaN/AlGaN ultraviolet light-emitting multiple quantum wells (MQWs) with identical average In content but different In gradients (In content increases linearly, along the growth direction) are investigated numerically. It is found that the luminescence eff...
Saved in:
Main Authors: | Jie Zhang, Wei Liu, Shuyuan Zhang |
---|---|
Format: | article |
Language: | EN |
Published: |
MDPI AG
2021
|
Subjects: | |
Online Access: | https://doaj.org/article/aad3369a37c74b40a07d0ffb7f045fb6 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy
by: Xue Zhang, et al.
Published: (2021) -
Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment
by: Yufei Hou, et al.
Published: (2021) -
InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates
by: Ryan C. White, et al.
Published: (2021) -
Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
by: Jianfei Li, et al.
Published: (2021) -
Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures
by: Chibuzo Onwukaeme, et al.
Published: (2021)