Coplanar-gate ZnO nanowire field emitter arrays with enhanced gate-control performance using a ring-shaped cathode

Abstract Nanowire field emitters have great potential for use as large-area gated field emitter arrays (FEAs). However, the micrometer-scale cathode patterns in gated FEA devices will reduce regulation of the gate voltage and limit the field emission currents of these devices as a result of field-sc...

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Autores principales:	Long Zhao, Yicong Chen, Zhipeng Zhang, Xiuqing Cao, Guofu Zhang, Juncong She, Shaozhi Deng, Ningsheng Xu, Jun Chen
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/ab0cc1f4e293499988f470acd6ce2385
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spelling	oai:doaj.org-article:ab0cc1f4e293499988f470acd6ce23852021-12-02T15:08:56ZCoplanar-gate ZnO nanowire field emitter arrays with enhanced gate-control performance using a ring-shaped cathode10.1038/s41598-018-30279-y2045-2322https://doaj.org/article/ab0cc1f4e293499988f470acd6ce23852018-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-30279-yhttps://doaj.org/toc/2045-2322Abstract Nanowire field emitters have great potential for use as large-area gated field emitter arrays (FEAs). However, the micrometer-scale cathode patterns in gated FEA devices will reduce regulation of the gate voltage and limit the field emission currents of these devices as a result of field-screening effect among the neighboring nanowires. In this article, a ring-shaped ZnO nanowire pad is proposed to overcome this problem. Diode measurements show that the prepared ring-shaped ZnO nanowire pad arrays shows uniform emission with a turn-on field of 5.9 V/µm and a field emission current density of 4.6 mA/cm2 under an applied field of 9 V/µm. The ZnO nanowire pad arrays were integrated into coplanar-gate FEAs and enhanced gate-controlled device characteristics were obtained. The gate-controlled capability was studied via microscopic in-situ measurements of the field emission from the ZnO nanowires in the coplanar-gate FEAs. Based on the results of both simulations and experiments, we attributed the enhanced gate-controlled device capabilities to more efficient emission of electrons from the ZnO nanowires as a result of the increase edge area by designing ring-shaped ZnO nanowire pad. The results are important to the realization of large-area gate-controlled FEAs based on nanowire emitters for use in vacuum electronic devices.Long ZhaoYicong ChenZhipeng ZhangXiuqing CaoGuofu ZhangJuncong SheShaozhi DengNingsheng XuJun ChenNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Long Zhao Yicong Chen Zhipeng Zhang Xiuqing Cao Guofu Zhang Juncong She Shaozhi Deng Ningsheng Xu Jun Chen Coplanar-gate ZnO nanowire field emitter arrays with enhanced gate-control performance using a ring-shaped cathode
description	Abstract Nanowire field emitters have great potential for use as large-area gated field emitter arrays (FEAs). However, the micrometer-scale cathode patterns in gated FEA devices will reduce regulation of the gate voltage and limit the field emission currents of these devices as a result of field-screening effect among the neighboring nanowires. In this article, a ring-shaped ZnO nanowire pad is proposed to overcome this problem. Diode measurements show that the prepared ring-shaped ZnO nanowire pad arrays shows uniform emission with a turn-on field of 5.9 V/µm and a field emission current density of 4.6 mA/cm2 under an applied field of 9 V/µm. The ZnO nanowire pad arrays were integrated into coplanar-gate FEAs and enhanced gate-controlled device characteristics were obtained. The gate-controlled capability was studied via microscopic in-situ measurements of the field emission from the ZnO nanowires in the coplanar-gate FEAs. Based on the results of both simulations and experiments, we attributed the enhanced gate-controlled device capabilities to more efficient emission of electrons from the ZnO nanowires as a result of the increase edge area by designing ring-shaped ZnO nanowire pad. The results are important to the realization of large-area gate-controlled FEAs based on nanowire emitters for use in vacuum electronic devices.
format	article
author	Long Zhao Yicong Chen Zhipeng Zhang Xiuqing Cao Guofu Zhang Juncong She Shaozhi Deng Ningsheng Xu Jun Chen
author_facet	Long Zhao Yicong Chen Zhipeng Zhang Xiuqing Cao Guofu Zhang Juncong She Shaozhi Deng Ningsheng Xu Jun Chen
author_sort	Long Zhao
title	Coplanar-gate ZnO nanowire field emitter arrays with enhanced gate-control performance using a ring-shaped cathode
title_short	Coplanar-gate ZnO nanowire field emitter arrays with enhanced gate-control performance using a ring-shaped cathode
title_full	Coplanar-gate ZnO nanowire field emitter arrays with enhanced gate-control performance using a ring-shaped cathode
title_fullStr	Coplanar-gate ZnO nanowire field emitter arrays with enhanced gate-control performance using a ring-shaped cathode
title_full_unstemmed	Coplanar-gate ZnO nanowire field emitter arrays with enhanced gate-control performance using a ring-shaped cathode
title_sort	coplanar-gate zno nanowire field emitter arrays with enhanced gate-control performance using a ring-shaped cathode
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/ab0cc1f4e293499988f470acd6ce2385
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Coplanar-gate ZnO nanowire field emitter arrays with enhanced gate-control performance using a ring-shaped cathode

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