Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy
Abstract Two-dimensional (2D) layered GaSe films were grown on GaAs (001), GaN/Sapphire, and Mica substrates by molecular beam epitaxy (MBE). The in situ reflective high-energy electron diffraction monitoring reveals randomly in-plane orientations of nucleated GaSe layers grown on hexagonal GaN/Sapp...
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oai:doaj.org-article:ab219f9fc0b54390a040ed381c155c462021-12-02T16:06:39ZSubstrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy10.1038/s41598-020-69946-42045-2322https://doaj.org/article/ab219f9fc0b54390a040ed381c155c462020-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-69946-4https://doaj.org/toc/2045-2322Abstract Two-dimensional (2D) layered GaSe films were grown on GaAs (001), GaN/Sapphire, and Mica substrates by molecular beam epitaxy (MBE). The in situ reflective high-energy electron diffraction monitoring reveals randomly in-plane orientations of nucleated GaSe layers grown on hexagonal GaN/Sapphire and Mica substrates, whereas single-orientation GaSe domain is predominant in the GaSe/GaAs (001) sample. Strong red-shifts in the frequency of in-plane $${E}_{2g}^{2}$$ E2g2 vibration modes and bound exciton emissions observed from Raman scattering and photoluminescence spectra in all samples are attributed to the unintentionally biaxial in-plane tensile strains, induced by the dissimilarity of symmetrical surface structure between the 2D-GaSe layers and the substrates during the epitaxial growth. The results in this study provide an important understanding of the MBE-growth process of 2D-GaSe on 2D/3D hybrid-heterostructures and pave the way in strain engineering and optical manipulation of 2D layered GaSe materials for novel optoelectronic integrated technologies.Cheng-Wei LiuJin-Ji DaiSsu-Kuan WuNhu-Quynh DiepSa-Hoang HuynhThi-Thu MaiHua-Chiang WenChi-Tsu YuanWu-Ching ChouJi-Lin ShenHuy-Hoang LucNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-8 (2020) |
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Medicine R Science Q |
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Medicine R Science Q Cheng-Wei Liu Jin-Ji Dai Ssu-Kuan Wu Nhu-Quynh Diep Sa-Hoang Huynh Thi-Thu Mai Hua-Chiang Wen Chi-Tsu Yuan Wu-Ching Chou Ji-Lin Shen Huy-Hoang Luc Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy |
| description |
Abstract Two-dimensional (2D) layered GaSe films were grown on GaAs (001), GaN/Sapphire, and Mica substrates by molecular beam epitaxy (MBE). The in situ reflective high-energy electron diffraction monitoring reveals randomly in-plane orientations of nucleated GaSe layers grown on hexagonal GaN/Sapphire and Mica substrates, whereas single-orientation GaSe domain is predominant in the GaSe/GaAs (001) sample. Strong red-shifts in the frequency of in-plane $${E}_{2g}^{2}$$ E2g2 vibration modes and bound exciton emissions observed from Raman scattering and photoluminescence spectra in all samples are attributed to the unintentionally biaxial in-plane tensile strains, induced by the dissimilarity of symmetrical surface structure between the 2D-GaSe layers and the substrates during the epitaxial growth. The results in this study provide an important understanding of the MBE-growth process of 2D-GaSe on 2D/3D hybrid-heterostructures and pave the way in strain engineering and optical manipulation of 2D layered GaSe materials for novel optoelectronic integrated technologies. |
| format |
article |
| author |
Cheng-Wei Liu Jin-Ji Dai Ssu-Kuan Wu Nhu-Quynh Diep Sa-Hoang Huynh Thi-Thu Mai Hua-Chiang Wen Chi-Tsu Yuan Wu-Ching Chou Ji-Lin Shen Huy-Hoang Luc |
| author_facet |
Cheng-Wei Liu Jin-Ji Dai Ssu-Kuan Wu Nhu-Quynh Diep Sa-Hoang Huynh Thi-Thu Mai Hua-Chiang Wen Chi-Tsu Yuan Wu-Ching Chou Ji-Lin Shen Huy-Hoang Luc |
| author_sort |
Cheng-Wei Liu |
| title |
Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy |
| title_short |
Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy |
| title_full |
Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy |
| title_fullStr |
Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy |
| title_full_unstemmed |
Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy |
| title_sort |
substrate-induced strain in 2d layered gase materials grown by molecular beam epitaxy |
| publisher |
Nature Portfolio |
| publishDate |
2020 |
| url |
https://doaj.org/article/ab219f9fc0b54390a040ed381c155c46 |
| work_keys_str_mv |
AT chengweiliu substrateinducedstrainin2dlayeredgasematerialsgrownbymolecularbeamepitaxy AT jinjidai substrateinducedstrainin2dlayeredgasematerialsgrownbymolecularbeamepitaxy AT ssukuanwu substrateinducedstrainin2dlayeredgasematerialsgrownbymolecularbeamepitaxy AT nhuquynhdiep substrateinducedstrainin2dlayeredgasematerialsgrownbymolecularbeamepitaxy AT sahoanghuynh substrateinducedstrainin2dlayeredgasematerialsgrownbymolecularbeamepitaxy AT thithumai substrateinducedstrainin2dlayeredgasematerialsgrownbymolecularbeamepitaxy AT huachiangwen substrateinducedstrainin2dlayeredgasematerialsgrownbymolecularbeamepitaxy AT chitsuyuan substrateinducedstrainin2dlayeredgasematerialsgrownbymolecularbeamepitaxy AT wuchingchou substrateinducedstrainin2dlayeredgasematerialsgrownbymolecularbeamepitaxy AT jilinshen substrateinducedstrainin2dlayeredgasematerialsgrownbymolecularbeamepitaxy AT huyhoangluc substrateinducedstrainin2dlayeredgasematerialsgrownbymolecularbeamepitaxy |
| _version_ |
1718384923020099584 |