Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy

Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy

Abstract Two-dimensional (2D) layered GaSe films were grown on GaAs (001), GaN/Sapphire, and Mica substrates by molecular beam epitaxy (MBE). The in situ reflective high-energy electron diffraction monitoring reveals randomly in-plane orientations of nucleated GaSe layers grown on hexagonal GaN/Sapp...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Cheng-Wei Liu, Jin-Ji Dai, Ssu-Kuan Wu, Nhu-Quynh Diep, Sa-Hoang Huynh, Thi-Thu Mai, Hua-Chiang Wen, Chi-Tsu Yuan, Wu-Ching Chou, Ji-Lin Shen, Huy-Hoang Luc
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
Materias:
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/ab219f9fc0b54390a040ed381c155c46
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

Ejemplares similares