Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Perpendicular magnetic tunnel junctions with large tunnel magnetoresistance and low junction resistance are promising for the magnetic random access memories. Here the authors achieve the spin-transfer-torque switching in perpendicular magnetic tunnel junctions with 249% tunnel magnetoresistance and...

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Auteurs principaux: Mengxing Wang, Wenlong Cai, Kaihua Cao, Jiaqi Zhou, Jerzy Wrona, Shouzhong Peng, Huaiwen Yang, Jiaqi Wei, Wang Kang, Youguang Zhang, Jürgen Langer, Berthold Ocker, Albert Fert, Weisheng Zhao
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Langue:EN
Publié: Nature Portfolio 2018
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Accès en ligne:https://doaj.org/article/ab6cad3ba67342129c179510c5c1f461
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spelling oai:doaj.org-article:ab6cad3ba67342129c179510c5c1f4612021-12-02T17:31:11ZCurrent-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance10.1038/s41467-018-03140-z2041-1723https://doaj.org/article/ab6cad3ba67342129c179510c5c1f4612018-02-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-03140-zhttps://doaj.org/toc/2041-1723Perpendicular magnetic tunnel junctions with large tunnel magnetoresistance and low junction resistance are promising for the magnetic random access memories. Here the authors achieve the spin-transfer-torque switching in perpendicular magnetic tunnel junctions with 249% tunnel magnetoresistance and low resistance-area product.Mengxing WangWenlong CaiKaihua CaoJiaqi ZhouJerzy WronaShouzhong PengHuaiwen YangJiaqi WeiWang KangYouguang ZhangJürgen LangerBerthold OckerAlbert FertWeisheng ZhaoNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Mengxing Wang
Wenlong Cai
Kaihua Cao
Jiaqi Zhou
Jerzy Wrona
Shouzhong Peng
Huaiwen Yang
Jiaqi Wei
Wang Kang
Youguang Zhang
Jürgen Langer
Berthold Ocker
Albert Fert
Weisheng Zhao
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
description Perpendicular magnetic tunnel junctions with large tunnel magnetoresistance and low junction resistance are promising for the magnetic random access memories. Here the authors achieve the spin-transfer-torque switching in perpendicular magnetic tunnel junctions with 249% tunnel magnetoresistance and low resistance-area product.
format article
author Mengxing Wang
Wenlong Cai
Kaihua Cao
Jiaqi Zhou
Jerzy Wrona
Shouzhong Peng
Huaiwen Yang
Jiaqi Wei
Wang Kang
Youguang Zhang
Jürgen Langer
Berthold Ocker
Albert Fert
Weisheng Zhao
author_facet Mengxing Wang
Wenlong Cai
Kaihua Cao
Jiaqi Zhou
Jerzy Wrona
Shouzhong Peng
Huaiwen Yang
Jiaqi Wei
Wang Kang
Youguang Zhang
Jürgen Langer
Berthold Ocker
Albert Fert
Weisheng Zhao
author_sort Mengxing Wang
title Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
title_short Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
title_full Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
title_fullStr Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
title_full_unstemmed Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
title_sort current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
publisher Nature Portfolio
publishDate 2018
url https://doaj.org/article/ab6cad3ba67342129c179510c5c1f461
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AT wenlongcai currentinducedmagnetizationswitchinginatomthicktungstenengineeredperpendicularmagnetictunneljunctionswithlargetunnelmagnetoresistance
AT kaihuacao currentinducedmagnetizationswitchinginatomthicktungstenengineeredperpendicularmagnetictunneljunctionswithlargetunnelmagnetoresistance
AT jiaqizhou currentinducedmagnetizationswitchinginatomthicktungstenengineeredperpendicularmagnetictunneljunctionswithlargetunnelmagnetoresistance
AT jerzywrona currentinducedmagnetizationswitchinginatomthicktungstenengineeredperpendicularmagnetictunneljunctionswithlargetunnelmagnetoresistance
AT shouzhongpeng currentinducedmagnetizationswitchinginatomthicktungstenengineeredperpendicularmagnetictunneljunctionswithlargetunnelmagnetoresistance
AT huaiwenyang currentinducedmagnetizationswitchinginatomthicktungstenengineeredperpendicularmagnetictunneljunctionswithlargetunnelmagnetoresistance
AT jiaqiwei currentinducedmagnetizationswitchinginatomthicktungstenengineeredperpendicularmagnetictunneljunctionswithlargetunnelmagnetoresistance
AT wangkang currentinducedmagnetizationswitchinginatomthicktungstenengineeredperpendicularmagnetictunneljunctionswithlargetunnelmagnetoresistance
AT youguangzhang currentinducedmagnetizationswitchinginatomthicktungstenengineeredperpendicularmagnetictunneljunctionswithlargetunnelmagnetoresistance
AT jurgenlanger currentinducedmagnetizationswitchinginatomthicktungstenengineeredperpendicularmagnetictunneljunctionswithlargetunnelmagnetoresistance
AT bertholdocker currentinducedmagnetizationswitchinginatomthicktungstenengineeredperpendicularmagnetictunneljunctionswithlargetunnelmagnetoresistance
AT albertfert currentinducedmagnetizationswitchinginatomthicktungstenengineeredperpendicularmagnetictunneljunctionswithlargetunnelmagnetoresistance
AT weishengzhao currentinducedmagnetizationswitchinginatomthicktungstenengineeredperpendicularmagnetictunneljunctionswithlargetunnelmagnetoresistance
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