APA (7th ed.) Citation

Zhang, Z., Liu, Y., Wei, Q., Zhang, Q., Li, J., Wei, F., . . . Yin, H. (2021). Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel. Wiley.

Chicago Style (17th ed.) Citation

Zhang, Zhaohao, Yaoguang Liu, Qianhui Wei, Qingzhu Zhang, Junjie Li, Feng Wei, Zhenhua Wu, and Huaxiang Yin. Large Memory Window with Low Operating Voltages Using Hf1.5Gd2O6 Charge Trapping Layer and Thin MoS2 Channel. Wiley, 2021.

MLA (8th ed.) Citation

Zhang, Zhaohao, et al. Large Memory Window with Low Operating Voltages Using Hf1.5Gd2O6 Charge Trapping Layer and Thin MoS2 Channel. Wiley, 2021.