Cita APA (7a ed.)

Zhang, Z., Liu, Y., Wei, Q., Zhang, Q., Li, J., Wei, F., . . . Yin, H. (2021). Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel. Wiley.

Cita Chicago Style (17a ed.)

Zhang, Zhaohao, Yaoguang Liu, Qianhui Wei, Qingzhu Zhang, Junjie Li, Feng Wei, Zhenhua Wu, y Huaxiang Yin. Large Memory Window with Low Operating Voltages Using Hf1.5Gd2O6 Charge Trapping Layer and Thin MoS2 Channel. Wiley, 2021.

Cita MLA (8a ed.)

Zhang, Zhaohao, et al. Large Memory Window with Low Operating Voltages Using Hf1.5Gd2O6 Charge Trapping Layer and Thin MoS2 Channel. Wiley, 2021.