Style de citation APA (7e éd.)

Zhang, Z., Liu, Y., Wei, Q., Zhang, Q., Li, J., Wei, F., . . . Yin, H. (2021). Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel. Wiley.

Style de citation Chicago (17e éd.)

Zhang, Zhaohao, Yaoguang Liu, Qianhui Wei, Qingzhu Zhang, Junjie Li, Feng Wei, Zhenhua Wu, et Huaxiang Yin. Large Memory Window with Low Operating Voltages Using Hf1.5Gd2O6 Charge Trapping Layer and Thin MoS2 Channel. Wiley, 2021.

Style de citation MLA (8e éd.)

Zhang, Zhaohao, et al. Large Memory Window with Low Operating Voltages Using Hf1.5Gd2O6 Charge Trapping Layer and Thin MoS2 Channel. Wiley, 2021.