Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel

Abstract A charge‐trapping memory (CTM) field effect transistor (FET) featured with an Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel are fabricated. Benefit from high defect densities of the Hf1.5Gd2O6 film, large memory windows are achieved under low operating voltages (2.3 V@4 V, 3.1 V@5...

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Autores principales:	Zhaohao Zhang, Yaoguang Liu, Qianhui Wei, Qingzhu Zhang, Junjie Li, Feng Wei, Zhenhua Wu, Huaxiang Yin
Formato:	article
Lenguaje:	EN
Publicado:	Wiley 2021
Materias:	Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/abf56457fc5a45ff9a73d57d23e092b5
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spelling	oai:doaj.org-article:abf56457fc5a45ff9a73d57d23e092b52021-12-03T08:34:31ZLarge memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel1350-911X0013-519410.1049/ell2.12333https://doaj.org/article/abf56457fc5a45ff9a73d57d23e092b52021-12-01T00:00:00Zhttps://doi.org/10.1049/ell2.12333https://doaj.org/toc/0013-5194https://doaj.org/toc/1350-911XAbstract A charge‐trapping memory (CTM) field effect transistor (FET) featured with an Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel are fabricated. Benefit from high defect densities of the Hf1.5Gd2O6 film, large memory windows are achieved under low operating voltages (2.3 V@4 V, 3.1 V@5 V and 3.6 V@6 V), which distinctly outperform previously reported CTMs. In addition, high programming/erase (P/E) speeds, good data retention and endurance characteristics are experimentally demonstrated. The results demonstrate a feasibility of CTM FET with an HfGdO charge trapping layer and thin MoS2 channel for ultra‐low power memory devices application.Zhaohao ZhangYaoguang LiuQianhui WeiQingzhu ZhangJunjie LiFeng WeiZhenhua WuHuaxiang YinWileyarticleElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENElectronics Letters, Vol 57, Iss 25, Pp 992-994 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Electrical engineering. Electronics. Nuclear engineering TK1-9971 Zhaohao Zhang Yaoguang Liu Qianhui Wei Qingzhu Zhang Junjie Li Feng Wei Zhenhua Wu Huaxiang Yin Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel
description	Abstract A charge‐trapping memory (CTM) field effect transistor (FET) featured with an Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel are fabricated. Benefit from high defect densities of the Hf1.5Gd2O6 film, large memory windows are achieved under low operating voltages (2.3 V@4 V, 3.1 V@5 V and 3.6 V@6 V), which distinctly outperform previously reported CTMs. In addition, high programming/erase (P/E) speeds, good data retention and endurance characteristics are experimentally demonstrated. The results demonstrate a feasibility of CTM FET with an HfGdO charge trapping layer and thin MoS2 channel for ultra‐low power memory devices application.
format	article
author	Zhaohao Zhang Yaoguang Liu Qianhui Wei Qingzhu Zhang Junjie Li Feng Wei Zhenhua Wu Huaxiang Yin
author_facet	Zhaohao Zhang Yaoguang Liu Qianhui Wei Qingzhu Zhang Junjie Li Feng Wei Zhenhua Wu Huaxiang Yin
author_sort	Zhaohao Zhang
title	Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel
title_short	Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel
title_full	Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel
title_fullStr	Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel
title_full_unstemmed	Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel
title_sort	large memory window with low operating voltages using hf1.5gd2o6 charge trapping layer and thin mos2 channel
publisher	Wiley
publishDate	2021
url	https://doaj.org/article/abf56457fc5a45ff9a73d57d23e092b5
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Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel

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