Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel
Abstract A charge‐trapping memory (CTM) field effect transistor (FET) featured with an Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel are fabricated. Benefit from high defect densities of the Hf1.5Gd2O6 film, large memory windows are achieved under low operating voltages (2.3 V@4 V, 3.1 V@5...
Enregistré dans:
| Auteurs principaux: | , , , , , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
Wiley
2021
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/abf56457fc5a45ff9a73d57d23e092b5 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Soyez le premier à ajouter un commentaire!