Recent improvement of silicon absorption in opto-electric devices

Silicon dominates the contemporary electronic industry. However, being an indirect band-gap material, it is a poor absorber of light, which decreases the efficiency of Si-based photodetectors and photovoltaic devices. This review highlights recent studies performed towards improving the optical abso...

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Autor principal:	Yatsui Takashi
Formato:	article
Lenguaje:	EN
Publicado:	Institue of Optics and Electronics, Chinese Academy of Sciences 2019
Materias:	si indirect band gap plasmon first principle calculation near-field effect Optics. Light QC350-467
Acceso en línea:	https://doaj.org/article/acd80245913c46528b20e60185aaa80b
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spelling	oai:doaj.org-article:acd80245913c46528b20e60185aaa80b2021-11-11T09:52:59ZRecent improvement of silicon absorption in opto-electric devices2096-457910.29026/oea.2019.190023https://doaj.org/article/acd80245913c46528b20e60185aaa80b2019-10-01T00:00:00Zhttp://www.oejournal.org/article/doi/10.29026/oea.2019.190023https://doaj.org/toc/2096-4579Silicon dominates the contemporary electronic industry. However, being an indirect band-gap material, it is a poor absorber of light, which decreases the efficiency of Si-based photodetectors and photovoltaic devices. This review highlights recent studies performed towards improving the optical absorption of Si. A summary of recent theoretical approaches based on the first principle calculation has been provided. It is followed by an overview of recent experimental approaches including scattering, plasmon, hot electron, and near-field effects. The article concludes with a perspective on the future research direction of Si-based photodetectors and photovoltaic devices.Yatsui TakashiInstitue of Optics and Electronics, Chinese Academy of Sciencesarticlesiindirect band gapplasmonfirst principle calculationnear-field effectOptics. LightQC350-467ENOpto-Electronic Advances, Vol 2, Iss 10, Pp 190023-1-190023-8 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	si indirect band gap plasmon first principle calculation near-field effect Optics. Light QC350-467
spellingShingle	si indirect band gap plasmon first principle calculation near-field effect Optics. Light QC350-467 Yatsui Takashi Recent improvement of silicon absorption in opto-electric devices
description	Silicon dominates the contemporary electronic industry. However, being an indirect band-gap material, it is a poor absorber of light, which decreases the efficiency of Si-based photodetectors and photovoltaic devices. This review highlights recent studies performed towards improving the optical absorption of Si. A summary of recent theoretical approaches based on the first principle calculation has been provided. It is followed by an overview of recent experimental approaches including scattering, plasmon, hot electron, and near-field effects. The article concludes with a perspective on the future research direction of Si-based photodetectors and photovoltaic devices.
format	article
author	Yatsui Takashi
author_facet	Yatsui Takashi
author_sort	Yatsui Takashi
title	Recent improvement of silicon absorption in opto-electric devices
title_short	Recent improvement of silicon absorption in opto-electric devices
title_full	Recent improvement of silicon absorption in opto-electric devices
title_fullStr	Recent improvement of silicon absorption in opto-electric devices
title_full_unstemmed	Recent improvement of silicon absorption in opto-electric devices
title_sort	recent improvement of silicon absorption in opto-electric devices
publisher	Institue of Optics and Electronics, Chinese Academy of Sciences
publishDate	2019
url	https://doaj.org/article/acd80245913c46528b20e60185aaa80b
work_keys_str_mv	AT yatsuitakashi recentimprovementofsiliconabsorptioninoptoelectricdevices
_version_	1718439246689206272

Recent improvement of silicon absorption in opto-electric devices

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