Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS2

In many strongly correlated systems the coupling of electronic and lattice degrees of freedom leads to ambiguity over the mechanism driving electronic phase transitions. Here the authors show that inter-layer effects play an important role in the charge ordering transition of 1T-TaS2.

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Autores principales:	C. J. Butler, M. Yoshida, T. Hanaguri, Y. Iwasa
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/acfc418d7e794cc48b588c5970cbbaeb
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id	oai:doaj.org-article:acfc418d7e794cc48b588c5970cbbaeb
record_format	dspace
spelling	oai:doaj.org-article:acfc418d7e794cc48b588c5970cbbaeb2021-12-02T16:51:35ZMottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS210.1038/s41467-020-16132-92041-1723https://doaj.org/article/acfc418d7e794cc48b588c5970cbbaeb2020-05-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-16132-9https://doaj.org/toc/2041-1723In many strongly correlated systems the coupling of electronic and lattice degrees of freedom leads to ambiguity over the mechanism driving electronic phase transitions. Here the authors show that inter-layer effects play an important role in the charge ordering transition of 1T-TaS2.C. J. ButlerM. YoshidaT. HanaguriY. IwasaNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-6 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q C. J. Butler M. Yoshida T. Hanaguri Y. Iwasa Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS2
description	In many strongly correlated systems the coupling of electronic and lattice degrees of freedom leads to ambiguity over the mechanism driving electronic phase transitions. Here the authors show that inter-layer effects play an important role in the charge ordering transition of 1T-TaS2.
format	article
author	C. J. Butler M. Yoshida T. Hanaguri Y. Iwasa
author_facet	C. J. Butler M. Yoshida T. Hanaguri Y. Iwasa
author_sort	C. J. Butler
title	Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS2
title_short	Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS2
title_full	Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS2
title_fullStr	Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS2
title_full_unstemmed	Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS2
title_sort	mottness versus unit-cell doubling as the driver of the insulating state in 1t-tas2
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/acfc418d7e794cc48b588c5970cbbaeb
work_keys_str_mv	AT cjbutler mottnessversusunitcelldoublingasthedriveroftheinsulatingstatein1ttas2 AT myoshida mottnessversusunitcelldoublingasthedriveroftheinsulatingstatein1ttas2 AT thanaguri mottnessversusunitcelldoublingasthedriveroftheinsulatingstatein1ttas2 AT yiwasa mottnessversusunitcelldoublingasthedriveroftheinsulatingstatein1ttas2
_version_	1718382937508937728

Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS2

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