Role of dislocations in nitride laser diodes with different indium content

Abstract In this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial proce...

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Autores principales:	Agata Bojarska-Cieślińska, Łucja Marona, Julita Smalc-Koziorowska, Szymon Grzanka, Jan Weyher, Dario Schiavon, Piotr Perlin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/ad1ac300cccf4de3a4f0e4b600d3126c
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spelling	oai:doaj.org-article:ad1ac300cccf4de3a4f0e4b600d3126c2021-12-02T15:13:10ZRole of dislocations in nitride laser diodes with different indium content10.1038/s41598-020-79528-z2045-2322https://doaj.org/article/ad1ac300cccf4de3a4f0e4b600d3126c2021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-79528-zhttps://doaj.org/toc/2045-2322Abstract In this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.Agata Bojarska-CieślińskaŁucja MaronaJulita Smalc-KoziorowskaSzymon GrzankaJan WeyherDario SchiavonPiotr PerlinNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Agata Bojarska-Cieślińska Łucja Marona Julita Smalc-Koziorowska Szymon Grzanka Jan Weyher Dario Schiavon Piotr Perlin Role of dislocations in nitride laser diodes with different indium content
description	Abstract In this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.
format	article
author	Agata Bojarska-Cieślińska Łucja Marona Julita Smalc-Koziorowska Szymon Grzanka Jan Weyher Dario Schiavon Piotr Perlin
author_facet	Agata Bojarska-Cieślińska Łucja Marona Julita Smalc-Koziorowska Szymon Grzanka Jan Weyher Dario Schiavon Piotr Perlin
author_sort	Agata Bojarska-Cieślińska
title	Role of dislocations in nitride laser diodes with different indium content
title_short	Role of dislocations in nitride laser diodes with different indium content
title_full	Role of dislocations in nitride laser diodes with different indium content
title_fullStr	Role of dislocations in nitride laser diodes with different indium content
title_full_unstemmed	Role of dislocations in nitride laser diodes with different indium content
title_sort	role of dislocations in nitride laser diodes with different indium content
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/ad1ac300cccf4de3a4f0e4b600d3126c
work_keys_str_mv	AT agatabojarskacieslinska roleofdislocationsinnitridelaserdiodeswithdifferentindiumcontent AT łucjamarona roleofdislocationsinnitridelaserdiodeswithdifferentindiumcontent AT julitasmalckoziorowska roleofdislocationsinnitridelaserdiodeswithdifferentindiumcontent AT szymongrzanka roleofdislocationsinnitridelaserdiodeswithdifferentindiumcontent AT janweyher roleofdislocationsinnitridelaserdiodeswithdifferentindiumcontent AT darioschiavon roleofdislocationsinnitridelaserdiodeswithdifferentindiumcontent AT piotrperlin roleofdislocationsinnitridelaserdiodeswithdifferentindiumcontent
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Role of dislocations in nitride laser diodes with different indium content

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