Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices

We extended the density-gradient (DG) model to include a second-order quantum correction (SOQC) term. The DG model has been widely used as a device simulation model capable of simulating quantum effects in efficient way. However, when only the first order quantum correction term is considered in the...

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Autores principales:	Sungman Rhee, Daewon Kim, Kyeongyeon Kim, Seongwook Choi, Byung-Gook Park, Young June Park
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2020
Materias:	Density-gradient model second-order quantum correction single-charge effect sub-10-nm MOSFET device quantum confinement Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/ad2b12677b184d1187882fcc39e4f9c7
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spelling	oai:doaj.org-article:ad2b12677b184d1187882fcc39e4f9c72021-11-19T00:01:26ZExtension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices2168-673410.1109/JEDS.2020.2971426https://doaj.org/article/ad2b12677b184d1187882fcc39e4f9c72020-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8981987/https://doaj.org/toc/2168-6734We extended the density-gradient (DG) model to include a second-order quantum correction (SOQC) term. The DG model has been widely used as a device simulation model capable of simulating quantum effects in efficient way. However, when only the first order quantum correction term is considered in the DG model, it is difficult to accurately describe device characteristics such as carrier density or potential fluctuation in the narrow region due to discrete charges such as dopants and interface traps. Thus, we extended the DG model to the SOQC, implemented it as a three-dimensional (3D) simulator, and compared the simulation results for sub-10-nm devices, which have a single point charge, in the DG model and the 3D Schrödinger–Poisson (SP) solver. Through this, we identified that the DG extended to SOQC well reproduces the SP simulation results in terms of both capacitance–voltage (C–V) and local fluctuation in electron density.Sungman RheeDaewon KimKyeongyeon KimSeongwook ChoiByung-Gook ParkYoung June ParkIEEEarticleDensity-gradient modelsecond-order quantum correctionsingle-charge effectsub-10-nm MOSFET devicequantum confinementElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 8, Pp 213-222 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Density-gradient model second-order quantum correction single-charge effect sub-10-nm MOSFET device quantum confinement Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Density-gradient model second-order quantum correction single-charge effect sub-10-nm MOSFET device quantum confinement Electrical engineering. Electronics. Nuclear engineering TK1-9971 Sungman Rhee Daewon Kim Kyeongyeon Kim Seongwook Choi Byung-Gook Park Young June Park Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices
description	We extended the density-gradient (DG) model to include a second-order quantum correction (SOQC) term. The DG model has been widely used as a device simulation model capable of simulating quantum effects in efficient way. However, when only the first order quantum correction term is considered in the DG model, it is difficult to accurately describe device characteristics such as carrier density or potential fluctuation in the narrow region due to discrete charges such as dopants and interface traps. Thus, we extended the DG model to the SOQC, implemented it as a three-dimensional (3D) simulator, and compared the simulation results for sub-10-nm devices, which have a single point charge, in the DG model and the 3D Schrödinger–Poisson (SP) solver. Through this, we identified that the DG extended to SOQC well reproduces the SP simulation results in terms of both capacitance–voltage (C–V) and local fluctuation in electron density.
format	article
author	Sungman Rhee Daewon Kim Kyeongyeon Kim Seongwook Choi Byung-Gook Park Young June Park
author_facet	Sungman Rhee Daewon Kim Kyeongyeon Kim Seongwook Choi Byung-Gook Park Young June Park
author_sort	Sungman Rhee
title	Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices
title_short	Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices
title_full	Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices
title_fullStr	Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices
title_full_unstemmed	Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices
title_sort	extension of the dg model to the second-order quantum correction for analysis of the single-charge effect in sub-10-nm mos devices
publisher	IEEE
publishDate	2020
url	https://doaj.org/article/ad2b12677b184d1187882fcc39e4f9c7
work_keys_str_mv	AT sungmanrhee extensionofthedgmodeltothesecondorderquantumcorrectionforanalysisofthesinglechargeeffectinsub10nmmosdevices AT daewonkim extensionofthedgmodeltothesecondorderquantumcorrectionforanalysisofthesinglechargeeffectinsub10nmmosdevices AT kyeongyeonkim extensionofthedgmodeltothesecondorderquantumcorrectionforanalysisofthesinglechargeeffectinsub10nmmosdevices AT seongwookchoi extensionofthedgmodeltothesecondorderquantumcorrectionforanalysisofthesinglechargeeffectinsub10nmmosdevices AT byunggookpark extensionofthedgmodeltothesecondorderquantumcorrectionforanalysisofthesinglechargeeffectinsub10nmmosdevices AT youngjunepark extensionofthedgmodeltothesecondorderquantumcorrectionforanalysisofthesinglechargeeffectinsub10nmmosdevices
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Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices

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